IRFH7440TR2PBF

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IRFH7440TR2PBF is a N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with an integrated Schottky diode. It\'s an 80V N-Channel MOSFET and features high performance in a miniature package. Its size is 10mm x 10mm, and it has a TO-252 power surface mount package to make it easy to install.

IRFH7440TR2PBF\'s application field mainly contains high-side and low-side switches, DC-DC converters, high-side/low-side drivers and phase-shifted full-bridge drivers. It also provides long-term reliability and low on-state resistance, which can save energy by reducing conduction loses. It can dissipate up to 0.5 Watts and is suitable for double sided PCBs. It supports a wide range of temperature, from -55°C to +150°C. It has a low gate charge, which ensures fast switching speed.

The working principle of the IRFH7440TR2PBF is based on its MOSFET properties. It combines the environmental and electrical properties of both MOSFET and Schottky diode as one unit. To summarize, the IRFH7440TR2PBF is a two-terminal type transistor with one gate. The gate controls the current flowing from the drain to the source, by creating an electric field. A voltage applied on the gate can make the MOSFET turn on or off, which is called operating region. When the voltage drops below a certain threshold value, the MOSFET is turned off. The IRFH7440TR2PBF\'s Schottky diode will provide protection against voltage spikes.

In conclusion, IRFH7440TR2PBF MOSFET is ideal for controlling power electronics with its high performance, wide temperature range and low on-resistance. It\'s most applications include high-side and low-side switches, DC-DC converters, high-side/low-side drivers and phase-shifted full-bridge drivers. Its working principle is based on its MOSFET properties, and it has a Schottky diode installed to provide protection against voltage spikes.

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