IRFH7936TR2PBF

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IRFH7936TR2PBF is a high-power Field Effect Transistor (FET) manufactured by International Rectifier (IR). It is an Insulated Gate Bipolar Transistor (IGBT) optimized to offer reliable performance in high power switching applications. The device has a nominal voltage rating of 30V with a maximum breakdown voltage rating of 175V and a current rating of 180A.

Its primary application field are those requiring high current, low voltage and reverse polarity protection. IRFH7936TR2PBF FETs are widely used in automotive and industrial power systems, telecom power supplies, lithium-ion battery management, inverters and other power converters.

The working principle of the IRFH7936TR2PBF FET is based on the concept of a fully integrated P-Channel Depletion Mode DMOS FET Driver. It is composed of a P-Channel MOS integrated circuit (CIS), the FET, an insulated gate and an emitter structure, which together form an isolated gate and body depletion mode diode structure. The Gate voltage supplies the \'on\' voltage to the gate of the FET, controlling the gate voltage, while the integrated CIS circuit is used to provide a constant base current to the FET and provide the breakdown voltage protection.

The IRFH7936TR2PBF FET is constructed using a planar N-type MOSFET, insulated gate and IDSS element, and is encapsulated in a plastic (silicone) TO-2P-2 package. As a result, it provides higher power density, excellent thermal performance, low cost and high-voltage isolation. It is also highly resistant to short-term over-voltage and reverse polarity protection.

The IRFH7936TR2PBF FET is also optimized for efficient operation, offering low power loss at light load currents. Its high avalanche energy rating and excellent operating temperature range allows for reliable operation in temperature-critical applications. The FET utilizes its internal voltage regulator to protect the FET from over-voltage and also offers low gate charge and low gate resistance for improved switching performance.

Overall, the IRFH7936TR2PBF FET is an excellent choice for high power switching applications, offering enhanced performance, low power loss, and reverse polarity protection. It is available in a variety of package types and can be used in a wide range of applications. It is an ideal solution for automotive and industrial power systems, inverters, lithium-ion battery management, and other high power switching applications.

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