Allicdata Part #: | IRFHM831TRPBFTR-ND |
Manufacturer Part#: |
IRFHM831TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 14A PQFN |
More Detail: | N-Channel 30V 14A (Ta), 40A (Tc) 2.5W (Ta), 27W (T... |
DataSheet: | IRFHM831TRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 7.8 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 27W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PQFN (3x3) |
Package / Case: | 8-PowerTDFN |
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The IRFHM831TRPBF is a very special kind of transistor. It is a field effect transistor (FET) and is classified as a single MOSFET. A MOSFET, or metal oxide semiconductor field-effect transistor, is a type of transistor that uses a controlled electrostatic field to control the shape and polarity of a voltage applied to its gates. The IRFHM831TRPBF is a "Junction Field Effect Transistor" (JFET), which means that the gate of the FET is connected to the main terminal of the transistor. This ensures that the current flows from the main terminal to the gate. As with all FET transistors, the IRFHM831TRPBF has three terminals: Gates, Drains, and Sources. It also has a built-in temperature sensor which will automatically shut off the device if it has become too hot.
The IRFHM831TRPBF is most commonly used in applications that involve high voltages. It is typically used in the pole-mounted resistor or phase controllers that are often found in solar and wind energy systems. This is because the IRFHM831TRPBF can handle higher voltages than many other transistors. It also has a very low power dissipation, which means that it will use less energy compared to other transistors and can hence reduce total system energy costs. Furthermore, the temperature sensors integrated within the device mean that it can be used in applications where overheating is a concern.
The working principle behind the IRFHM831TRPBF is relatively simple. When the voltage applied to the gate is positive, a conduction channel will be formed between the source and the drain of the transistor. When the voltage applied to the gate is negative, the conduction channel will be shut off, effectively turning the transistor off. By varying the voltage applied to the gate, the IRFHM831TRPBF can be used to control the flow of current, making it an essential component of many pole-mounted devices.
In summary, the IRFHM831TRPBF is a single MOSFET transistor. It is most commonly used in applications that involve high voltages and has a low power dissipation. It also has integrated temperature sensors which will help to shut off the device if it becomes too hot. The principle behind the IRFHM831TRPBF is relatively simple: By varying the voltage applied to the gate, the transistor can be used to control the flow of current.
The specific data is subject to PDF, and the above content is for reference
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