IRFHM7194TRPBF Allicdata Electronics
Allicdata Part #:

IRFHM7194TRPBF-ND

Manufacturer Part#:

IRFHM7194TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 9.3A
More Detail: N-Channel 100V 9.3A (Ta), 34A (Tc) 2.8W (Ta), 37W ...
DataSheet: IRFHM7194TRPBF datasheetIRFHM7194TRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: FASTIRFET™, HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 50V
FET Feature: --
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Package / Case: 8-PowerTDFN
Description

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Transistors - FETs, MOSFETs - Single

IRFHM7194TRPBF application field and working principle

The IRFHM7194TRPBF is a metal oxide semiconductor field effect transistor (MOSFET) designed and produced by Infineon Technologies. This device can be used in a variety of applications, ranging from low frequency switching and linear amplification to power management and isolation. The device is characterized by a low on-state resistance, an insulated gate-source input, and a low gate threshold voltage. It is designed to withstand high temperatures and has an excellent thermal stability.The basic operation of the device involves controlling the current flow between the drain and the source terminals by applying a gate voltage. When the gate voltage is below a certain threshold level, the transistor will be off and the drain current will be zero. When the gate voltage is higher than the threshold, the transistor will be in the on state and the drain current will be controlled by the width of the gate voltage pulse applied. The amount of current that can be controlled is dependent on the size of the transistor and the power dissipation of the device.

The IRFHM7194TRPBF is particularly suited for applications such as power supplies, DC-DC converters and load switches as it has a low on-state resistance, excellent thermal stability and low gate threshold voltage. Its low on-state resistance means that less power is lost when the device is switched in the on state, allowing it to be more efficient. Its insulated gate input helps to reduce power losses due to gate leakage, which is a common problem in MOSFET devices. The device also has a low gate threshold voltage which helps to reduce the amount of power needed to switch the device. This makes it ideal for battery powered applications where power is a premium.

The IRFHM7194TRPBF also has a wide range of applications in audio, including switching and amplifying applications. Due to its low on-state resistance and excellent thermal stability, the device can be used to switch audio signals with minimal power losses. Its insulated gate input helps protect against interface noise from outside sources, and its low gate threshold voltage makes it easier to adjust the gain of the audio signal. These features make the device an ideal choice for audio switching and amplification applications.

The IRFHM7194TRPBF is an excellent choice for a wide range of applications due to its excellent performance characteristics. Its low on-state resistance and excellent thermal stability make it ideal for power management applications, while its insulated gate-source input and low gate threshold voltage make it ideal for audio switching and amplification applications. With its wide range of applications and excellent performance, the IRFHM7194TRPBF is an ideal choice for any application that requires switching and/or amplification.

The specific data is subject to PDF, and the above content is for reference

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