Allicdata Part #: | IRFH4201TRPBFTR-ND |
Manufacturer Part#: |
IRFH4201TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 49A 8PQFN |
More Detail: | N-Channel 25V 49A (Ta) 3.5W (Ta), 156W (Tc) Surfac... |
DataSheet: | IRFH4201TRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 49A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 0.95 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 94nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6100pF @ 13V |
FET Feature: | -- |
Power Dissipation (Max): | 3.5W (Ta), 156W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-PQFN (5x6) |
Package / Case: | 8-PowerVDFN |
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An IRFH4201TRPBF is a type of field-effect transistor (FET). It is typically used in power management applications like switching and DC-DC converter circuits. It is a single N-channel enhancement mode MOSFET which offers low on-state resistance and superior switching performance. The IRFH4201TRPBF is designed to provide high power density and excellent current transfer characteristics.
The IRFH4201TRPBF is a low on-resistance FET which is specifically designed to meet the requirements of a wide range of switching applications. It features a standard low-side MOSFET in a small SOT-223 package which simplifies the design and layout of the circuit board. The IRFH4201TRPBF also offers superior RDS(ON) performance with low gate charge and low total gate charge.
The IRFH4201TRPBF is a voltage-controlled device which consists of three main elements: the gate, the source, and the drain. The gate is an insulated gate and is responsible for controlling the flow of current to the channel, creating a channel that allows current to flow from the source to the drain. The source is the positive terminal and is usually connected to the positive supply of the circuit, and the drain is the negative terminal and is usually connected to the negative supply of the circuit.
This FET is normally in the \'off\' state due to its negative gate-source voltage. When a positive gate-source voltage is applied, it turns the device on, allowing current to flow from the source to the drain. As the voltage is increased, the current flow increases, until the MOSFET has reached a saturation point, at which point the device is in the fully \'on\' state. If the voltage is reversed, the FET will turn off, shutting off the current flow.
The IRFH4201TRPBF is used in a variety of applications, including DC-DC converters, motor control, and industrial automation. It is suitable for a wide range of switching applications, due to its low on-state resistance, high efficiency and rugged design. Its built-in protection features, such as over-temperature, under-voltage and reverse-current, provide safety and protection for the FET and its surrounding components.
The IRFH4201TRPBF is an ideal choice for designers who require a versatile and reliable FET for their next project. It offers high power density and excellent current transfer characteristics, making it the perfect choice for applications where performance, reliability and cost are all important factors.
The specific data is subject to PDF, and the above content is for reference
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