Allicdata Part #: | IRFI4020H-117P-ND |
Manufacturer Part#: |
IRFI4020H-117P |
Price: | $ 2.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 200V 9.1A TO-220FP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 200V 9.1A 21W Thro... |
DataSheet: | IRFI4020H-117P Datasheet/PDF |
Quantity: | 396 |
1 +: | $ 2.39400 |
10 +: | $ 2.13948 |
100 +: | $ 1.75449 |
500 +: | $ 1.42071 |
1000 +: | $ 1.19819 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 9.1A |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 4.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1240pF @ 25V |
Power - Max: | 21W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-5 Full Pack |
Supplier Device Package: | TO-220-5 Full-Pak |
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The IRFI4020H-117P is a Mosfet Array, which is a type of field-effect transistor or FET. FETs have semiconductor material between two metal plates. When the positive voltage applied to the gate electrode, the electrons from the semiconductor material will be attracted to the gate and this turns on the transistor.
The main features of the IRFI4020H-117P are: multi-tab construction for easy assembly, ultra low RDS(ON), simplified heatsinking, low gate charge, and cost effective solution. With the mentioned features, this transistor array can be used in several applications such as high frequency power switches, DC-to-DC converters and digital power applications.
The IRFI4020H-117P provides a multi-tab construction for easy assembly of the array. This means that each device in the array has its own tab and its own surface-mount connection. This makes installation and maintenance easier and more efficient compared to other FET arrays. In addition, the IRFI4020H-117P has an ultra low RDS(ON), which reduces power losses due to conduction through the FET and helps improve efficiency.
The IRFI4020H-117P also features low gate charge. Gate charge is referred to as the current that passes through the gate to charge its capacitance. A lower gate charge essentially means that the transistor will turn on faster, as the gate voltage does not need as high an amount of current to charge the capacitance. This is beneficial in applications where fast switching times are necessary, such as in power converters or digital power applications.
The IRFI4020H-117P also has simplified heatsinking, which is necessary to maintain the array at a safe operating temperature. Heat is released when current passes through the transistor array, and this heat needs to be dissipated in order to keep it cool and prevent any damage or malfunction. The IRFI4020H-117P has a simplified heatsinking system, which makes it easier to integrate the array into a device and keep it cool.
The IRFI4020H-117P also provides a cost effective solution as it is a more efficient and reliable alternative to traditional FET arrays. This makes it a good choice for applications where cost and efficiency are necessary, such as in d EV and automotive applications.
In conclusion, the IRFI4020H-117P is a Mosfet Array that combines several features such as multi-tab construction, ultra low RDS(ON), simplified heatsinking, and low gate charge. This makes it suited for applications such as high frequency power switching, DC-to-DC converters, and digital power applications. Its cost-effective solution also makes it suitable for use in EV and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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