IRFI734G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFI734G is a single, high–voltage, N–channel MOSFET device from International Rectifier family. This device is utilized as a voltage level–shifter, series regulator and a wide range of DC–DC converter applications. With its low on–resistance and avalanche–robust characteristics, it has become the preferred choice in many designs.IRFI734G is a single N–channel MOSFET whose main feature is an internal source follower structure. This device has a single extremely high voltage rating up to 600V, with specific features such as low on–resistance, high breakdown voltage and high avalanche energy. This structure enables very low gate–source on–voltage, allowing the device to drive higher load current as compared to other standard FET’s.Its basic applications include high power switching, high power level shifting, high–frequency, high–voltage switches and regulators. IRFI734G is also applicable in a variety of motor speed controllers, motor protection circuits and RF, optical and automotive applications.This MOSFET device is available in the standard TO–220 and TO–220FP packages. It has a continuous drain current rating of 60A and pulsed drain current capability of 120A at temperatures ranging from 180°C to 225°C. Its maximum power dissipation is up to 220W and can also be used in a wide range of temperature range operating up to 175°C.The source pin of IRFI734G is connected to the drain, while the gate terminal is connected to the source region and is responsible for controlling the current flow flowing through the device. This influencing factor of the gate–source voltage is the integral characteristic of a MOSFET and it is the most vital factor of this MOSFET device. In case of IRFI734G, it is recommended to have a forward voltage of 2.0V between the source and source regions.During switching operations, the higher voltage ratings enable the device to switch more reliably and with less losses at higher power levels. IRFI734G also has an enhanced body diode with low leakage current and higher break–over voltage which protects the system from overvoltage transients.The device also has a low gate charge, a low gate capacitance, an SO–2 package style and a special gate structure that ensures maximum switching performance and reliability. In addition, it is also RoHS compliant and handles high–voltage, high–current applications with ease.Overall, the IRFI734G device is an effective and highly reliable device with various features that make it suitable for a wide range of applications, allowing designers to use it for high–power applications and high voltage level–shifting, series regulating, and DC–DC converter functions. 

The specific data is subject to PDF, and the above content is for reference