IRFI520G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	37W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	360pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	270 mOhm @ 4.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	7.2A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRFI520G application fields and working principleIRFI520G is a high power metal-oxide-semiconductor field-effect transistor (MOSFET), made from gallium arsenide with an enhanced feature size, first manufactured by International Rectifier Corporation. The device was designed for use in the power industry for applications such as motor control, electric vehicle powertrains, battery management, rectification, DC-DC converter and switching.In an electronic circuit, the IRFI520G is used to amplify or switch electronic signals. It can serve as a rectifier, amplifier or line regulator in an analog-to-digital converter. MOSFETs have relatively low power consumption and can reduce heating issues because they have no current-draining components. They also yield low jamming and require low maintenance.The IRFI520G is a vertical channel (i.e., the channel extends in the z direction) MOSFET constructed on a GaAs substrate. The vertical channel is a new technology that improves the heat dissipation of the device. The GaAs substrate is a form of gallium arsenide, which has good efficiency and has a low reverse-transfer capacitance, making it suitable for switching at high frequencies.The IRFI520G is a single-channel MOSFET, meaning that there is only one drain and one source contact. The device has a gate terminal, which is the electrical switch that controls the flow of electrons through the channel, and the gate threshold voltage controls when the device starts to conduct. In order to turn the device off, the gate voltage needs to be higher than the threshold voltage. When the FET is in the off position, no current can flow through the device.The IRF520G has a voltage breakdown rating of -27 volts. The breakdown voltage is the voltage at which the device collides and ceases to conduct; this is the point where the current is not able to flow through the device. The device also has a drain-to-source on-resistance (RDSon) of 1.25 ohms and a maximum drain current rating of 5A, which means it can support a high current draw.The IRFI520G also has a fast body diode, meaning it can respond quickly to sudden changes in the voltage. The body diode is a protection feature that allows the device to remain in a conducting state even if the gate voltage is too low for the device to switch off.In conclusion, the IRFI520G is a high power, high breakdown voltage MOSFET designed for power applications. Its vertical channel and fast body diode make it ideal for switching operations, and its low RDSon allows for high current draw. The device is well suited for a variety of applications.

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