IRFI4229PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

An International Rectifier IRFI4229PBF is a part of the HEXFET Power MOSFET family that offers best-in-class switching performance and low on-state resistance. As a P Channel enhancement mode MOSFET, it is designed for extremely low on-state resistance, fast switching speed and good thermal performance. The device is capable of driving a wide range of loads, making it suitable for a variety of applications including power electronics, motor control, switching power supplies, converters and regulators.

The IRFI4229PBF performs by using a field effect transistor (FET), which is a type of semiconductor used to control the flow of current. FETs are voltage-controlled devices, meaning current is regulated by applying a voltage across the gate source. For the IRFI4229PBF, the gate source is a negative voltage, which induces electrons to move from the gate to the channel and cause Drain Current, or conductivity between the source and drain. When the gate-to-source voltage is removed, the channel isolates the source and drain and the device is turned off.

The IRFI4229PBF features low on-state resistance, low input capacitance, and fast switching speed, making it a useful device for power management applications. The device has an on-state resistance of 2.6mΩ and a maximum drain current of 70A. It also offers good thermal performance, with a maximum junction temperature of 175°C, which allows for operation under high temperature operation.

The IRFI4229PBF is also highly reliable and robust, due to its structure, which is built from silicon-on-insulator (SOI) technology. This technology makes the device resistant to electro-static discharge (ESD) and increases its immunity to noise. The device is also built with a hard-oxide gate to prevent gate corrosion, which increases the reliability of the device. Additionally, the device is EMI-tested to ensure that it meets international standards.

Overall, the IRFI4229PBF is an ideal device for a variety of power management applications. The device has low on-state resistance, fast switching speed, good thermal performance and is highly reliable. With these features, and the added benefit of SOI technology, the device is suitable for a variety of applications in the power electronics, motor control, and switching power supply industries.

The specific data is subject to PDF, and the above content is for reference