IRFIBC40GLC

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	39nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 2.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3.5A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The IRFIBC40GLC is a field-effect transistor (FET) produced by International Rectifier (IR). It is a 40V, 100A drain source N-channel enhancement-mode power mosfet. The power mosfet has a maximum on-state resistance (RDS(on)) of 11 milliohms, a maximum gate charge of 375 nanoCoulombs, and an operating junction temperature range of -55°C to 150°C. It is designed for low-voltage, high-current applications such as server power supplies, networking and telecom systems, and LED lighting fixtures.

Structure

The IRFIBC40GLC power mosfet is a four-terminal device composed of a source, a drain, a gate, and a tab. Both the source and the drain are connected to the silicon substrate through metal interconnects called source and drain electrodes. A layer of oxide sits between the silicon substrate and the metal layers, insulating them from each other. The gate is connected to the metal source and drain layers by a gate electrode, and the tab is connected to the silicon substrate by a bonding wire. This four-terminal structure is the key to the device’s function as a power mosfet.

Application Fields

The IRFIBC40GLC power mosfet is designed for use in a variety of applications, including server power supplies, networking and telecom systems, automotive power trains, and LED lighting fixtures. The low on-state resistance (RDS(on)) and low gate charge make the device well suited for high-frequency switching applications, including LCD display backlights, digital video recorders, TV receivers, and disk drives. The low gate threshold voltage and high transition frequency make it ideal for low-voltage, high-speed switching applications such as wireless communications.The IRFIBC40GLC power mosfet can also be used in power management circuits, such as DC-DC converters, AC-DC converters, and battery chargers, where high-efficiency and low-noise operation are desired. The device can also be used in motor control applications, to provide high-performance switching and over-current protection.

Working Principle

The IRFIBC40GLC power mosfet works by controlling the current flow between the source and the drain. When a voltage is applied to the gate, it forms an electric field which attracts charge carriers from the source to the drain. This in turn creates a conductive path, allowing current to flow from the source to the drain. By adjusting the voltage at the gate, the current flow can be modulated, allowing the device to be used as a switch.The power mosfet can also be used as a voltage regulator. By adjusting the gate voltage, the RDS(on) can be adjusted, and therefore the voltage across the device can be regulated. This technique is used in a variety of applications, such as LED lighting fixtures, where a uniform output voltage must be maintained despite variations in the input voltage or current.The power mosfet can also be used as a current limiter. By setting the gate voltage to a certain value, the device will remain off until the drain-source voltage reaches a certain level. At that point, the device will turn on, limiting the current flowing through it. This can be used to protect sensitive components from overcurrents.

Conclusion

In conclusion, the IRFIBC40GLC power mosfet is a versatile and reliable device, which can be used in a variety of applications, from server power supplies to motor control circuits. The low on-state resistance, low gate charge, and low gate threshold voltage make it ideal for high-frequency switching applications. The device can also be used for voltage regulation and current limiting, allowing it to be used for power management in a variety of systems.

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