IRFIBC30GPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	35W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	660pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2.2 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRFIBC30GPBF Application Field and Working Principle

IRFIBC30GPBF is a type of Insulated Gate Field Effect Transistor (IGFET) that operates by controlling the width of a channel of n-type or p-type semiconductor material with a gate terminal. The IRFIBC30GPBF, also known as the 30V 60A 200W N-Channel MOSFET, is designed for high-power switching and audio amplifier applications.The IRFIBC30GPBF is a depletion-mode MOSFET, meaning that, when the gate voltage is at 0V, the channel will be switched on and a current will flow from source to drain. It also has a very low on-resistance, making it ideal for applications where high current needs to be switched with low signal levels. It has a maximum drain current of 60A and a maximum drain source voltage of 30V.The operating principle of the IRFIBC30GPBF is based on a phenomenon known as “channel modulation”. As the gate voltage increases, the current in the gate electrode also increases, and this current causes a narrowing of the channel, which leads to an increase in the drain-source resistance. This increase in resistance reduces the current flowing through the device.When designing with the IRFIBC30GPBF, it is important to take into account the power rating of the device. The maximum power that can be dissipated by the device depends on the ambient temperature. As the temperature increases, the power rating decreases. For this reason, when designing with the device, it is important to use adequate heat-sinking, and to ensure that the ambient temperature does not exceed the maximum power rating of the device.The application field of IRFIBC30GPBF is wide and its main applications include high-power switching and audio amplifier applications. It can also be used for motor control and regulation, as well as for power supply regulation and voltage regulation.In summary, the IRFIBC30GPBF is a 30V 60A 200W N-Channel MOSFET. It operates by controlling the width of a channel of n-type or p-type semiconductor material with a gate terminal. It has a low on-resistance and a maximum power rating which is dependent on the ambient temperature. Its main applications include high-power switching and audio amplifier applications.

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