IRFI734GPBF Allicdata Electronics
Allicdata Part #:

IRFI734GPBF-ND

Manufacturer Part#:

IRFI734GPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 450V 3.4A TO220FP
More Detail: N-Channel 450V 3.4A (Tc) 35W (Tc) Through Hole TO-...
DataSheet: IRFI734GPBF datasheetIRFI734GPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Drain to Source Voltage (Vdss): 450V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFI734GPBF transistor is a single N-channel transistor, commonly available in a plastic TO-220 package. The device features a maximum drain source voltage of 60V and a maximum drain current of 81A. Additionally, the device has a low on-resistance of 90mOhm, which makes it an ideal choice for applications requiring power switching, such as DC/DC conversion, motor control, and audio amplification.

A transistor, short for transfer resistance, is an electronic device that amplifies or switches electronic signals and electrical power. The two main categories of transistors are bipolar junction transistors (BJT) and field effect transistors (FET). FETs, such as the IRFI734GPBF, are available in both enhancement mode and depletion mode configurations.

The IRFI734GPBF is an enhancement mode transistor. Enhancement mode transistors are turned on when a current is fed through their gate-source channel. This is achieved by creating an inversion layer, which results in a channel of free electrons enabling the current flow. When a positive voltage is fed to the gate, the channel is created and the device is turned on. Conversely, a negative voltage is fed to the gate to turn the device off.

The IRFI734GPBF has a wide range of applications, including: power MOSFET drive, DC/DC converters, and motor control. Being a single N-channel transistor, it is also suited for amplifier and filter circuits. Due to the low on-resistance, the device is ideal for high frequency switching applications requiring a low Rds(on).

With a maximum drain source voltage of 60V and a maximum drain current of 81A, the IRFI734GPBF can handle loads of up to 4.8kW. Additionally, the device also features a low gate threshold voltage of -3V, making it suitable for use in low voltage applications such as portable electronics.

The IRFI734GPBF is also available in a number of different packages, including the TO-220 package and the SC-70 package. The device can be easily soldered to a PCB and is compatible with the majority of soldering methods. Furthermore, the device can also be mounted to a heatsink or used with a dedicated heat sink.

In conclusion, the IRFI734GPBF is a single N-channel enhancement mode transistor that is ideal for a wide range of applications, such as DC/DC conversion, motor control and audio amplification. With a low on-resistance, a high maximum drain source voltage and a low gate threshold voltage, the device is capable of handling large power loads. Furthermore, the device is also available in a number of different packages, making it compatible with a large range of applications.

The specific data is subject to PDF, and the above content is for reference

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