IRFI9Z14GPBF Allicdata Electronics
Allicdata Part #:

IRFI9Z14GPBF-ND

Manufacturer Part#:

IRFI9Z14GPBF

Price: $ 1.73
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 5.3A TO220FP
More Detail: P-Channel 60V 5.3A (Tc) 27W (Tc) Through Hole TO-2...
DataSheet: IRFI9Z14GPBF datasheetIRFI9Z14GPBF Datasheet/PDF
Quantity: 1000
1 +: $ 1.73000
10 +: $ 1.67810
100 +: $ 1.64350
1000 +: $ 1.60890
10000 +: $ 1.55700
Stock 1000Can Ship Immediately
$ 1.73
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 27W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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An IRFI9Z14GPBF is a short channel and strong gate power MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. It is a type of single bipolar field effect transistor, which is commonly used in power amplifiers and other power components.

The IRFI9Z14GPBF has many advantages compared to other power MOSFETs. Compared to the older technologies, this device provides superior on-state drain current and low conduction losses. Its gate charge is low and its low parasitic capacitances ensure low switching losses. Its chip form is compact and its faster switching speeds compared to its predecessors make it suitable for many high-speed applications. This makes the IRFI9Z14GPBF ideal for many applications where high switching speeds, low conduction losses, and small packages are required.

The IRFI9Z14GPBF has an operation voltage of 10 V, with a drain current of 42 A at a drain to source voltage of 4.5 V. It has a thermal resistance of 1.7 °C/Watt, a flicker noise resistance of 100 mV, a dielectric strength of 200 V, and a max junction temperature of 175 °C.

The working principle of the IRFI9Z14GPBF is similar to other metal oxide semiconductor field effect transistors. When a voltage is applied across the metal gate and semiconductor source, the resistance between the source and drain terminals is controlled by the electric field created by the gate. This electric field controls the flow of current through the device and determines its parameters, such as on-state drain current and total gate charge.

The IRFI9Z14GPBF can be used in a wide variety of applications, such as DC/DC converters, motor control circuits, switching regulators, AC/DC converters, motor drives, and high-frequency power supplies. Its on-state drain current, low parasitic capacitances, and small packages make it suitable for high-frequency and high-current applications, as well as low-power applications. Its high switching speeds and low gate charge also make it suitable for power management applications.

Overall, the IRFI9Z14GPBF is an excellent choice for high-efficiency and high-speed power management applications. With its small package and low gate charge, it can provide superior performance in switching regulators, motor control circuits, and other similar systems.

The specific data is subject to PDF, and the above content is for reference

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