Allicdata Part #: | IRFI4024H-117P-ND |
Manufacturer Part#: |
IRFI4024H-117P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 55V 11A TO-220FP-5 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 55V 11A 14W Throug... |
DataSheet: | IRFI4024H-117P Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 11A |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 7.7A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 320pF @ 50V |
Power - Max: | 14W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-5 Full Pack |
Supplier Device Package: | TO-220-5 Full-Pak |
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IRFI4024H-117P is an array of enhancement Field Effect Transistors (FETs) that can be used in a wide range of applications. This type of FET is a three-terminal device with a Source terminal, a Gate terminal and a Drain terminal. When a voltage applied to the Gate terminal, an electric field is created between the Source and the Drain which controls the flow of current through the device. This type of FET is commonly used in analog and digital circuits, motor control, and other power management applications.
The IRFI4024H-117P is an enhancement mode type FET, meaning it is normally off and needs a voltage or current to turn the FET on. When the voltage or current applied to the Gate terminal is higher than the threshold voltage of the device, the electric field created between the Source and the Drain will enable the current through the device. This current flow can then be modulated by varying the voltage or current applied to the Gate. The IRFI4024H-117P’s threshold voltage is 10V, which can make it suitable for more demanding power management applications.
The IRFI4024H-117P has an array of four FETs, each with a maximum power dissipation of 2W. This rating makes them suitable for many high-power control applications, such as motor control, power supply circuits and power management for high power applications. The IRFI4024H-117P also has a maximum drain-source breakdown voltage of 200V which is also useful for power applications as it limits the maximum current flow through the FETs. Additionally, the maximum gate-source voltage rating of +/-25V adds flexibility when it comes to controlling and managing the voltage applied to the FETs.
The IRFI4024H-117P also features a wide operating temperature range of -55°C to +175°C and a maximum junction temperature of 200°C, which makes it suitable for use in a wide range of applications and environments. This type of FET is also designed with a surface-mounted leadframe to make it easier to mount on printed circuit boards for redundancy and reliability. The overall footprint of the IRFI4024H-117P is also relatively small, making it suitable for use in space constrained applications.
In conclusion, the IRFI4024H-117P is an array of four enhancement FETs which makes it ideal for a wide range of power management applications. It features a low threshold voltage, high power dissipation and a wide operating temperature range, making it suitable for use in high power, hot and demanding industrial applications. With its small footprint and surface-mounted leadframes, the IRFI4024H-117P is also easy to install in any space-constrained environment. Moreover, its array of FETs can provide redundancy and reliability for demanding power management applications.
The specific data is subject to PDF, and the above content is for reference
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