IRFIB7N50LPBF

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IRFIB7N50LPBF is a device offered by Infineon Technologies and belongs to the range of Transistors - FETs, MOSFETs - Single. It is specifically designed to serve applications that mandate the need for extremely low on-resistance, very low gate charge, and fast switching capabilities.

As a power MOSFET, the IRFIB7N50LPBF is a voltage controlled device. It is a three-layer construction consisting of an insulated gate, a body or channel, and a source-drain path. In an on-state condition, a low voltage applied to the gate with respect to the source electrode creates an inversion layer in the body region. This inversion layer forms a conductive path between the source and drain electrodes, enabling current flow. By increasing the gate voltage, current conduction increases as well. The inverse is also true, decreasing the gate voltage reduces current conduction, which inhibits current flow.

This Infineon device is specifically designed and optimized to exhibit the lowest on-resistance per gate charge while still operating in a safe current and temperature operating window. Its low gate charge, combined with its extremely low on-resistance, makes it suitable for a variety of high-power applications such as server power, telecommunications, and battery management.

The IRFIB7N50LPBF exhibits excellent immunity of Gate-to-Source Voltage spikes with a Vgs of 10V. This robustness ensures that the device can function and protect itself from accidental voltage transients. The direct current forward drain current at 25⁰C is rated at 7A, with a gate to source voltage of 10 V. It has a RDSon rating of 1.4 mΩ and VGS=4.5V, and a low output capacitance of 2800 pF.

Infineon’s IRFIB7N50LPBF is an ideal choice for applications requiring an extremely small on-resistance rating at a low gate charge. The device offers fast switching characteristics and exhibits excellent immunity to gate-to-source voltage spikes, making it well suited for server power and battery management applications. With a rated drain current of 7 A and a low output capacitance of 2800 pF, this MOSFET is an excellent choice for those who are looking for an efficient, reliable power device.

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