IRFI9Z14G Allicdata Electronics
Allicdata Part #:

IRFI9Z14G-ND

Manufacturer Part#:

IRFI9Z14G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 5.3A TO220FP
More Detail: P-Channel 60V 5.3A (Tc) 27W (Tc) Through Hole TO-2...
DataSheet: IRFI9Z14G datasheetIRFI9Z14G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 27W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFI9Z14G is a MOSFET and belongs to the single category. These devices are used mainly in power management, regulation and distribution, and voltage-switching applications and consist of an insulated-gate field effect transistor. The IRFI9Z14G has a lower RDS(on) (Drain-Source On Resistance) and faster switching times when compared to other single MOSFETs available in the market.

The MOSFET is a voltage controlled unipolar device whose current is switched on and off using a voltage source. It is basically composed of a source region, a drain region, and a gate region. To apply gate voltage, the gate has to be insulated from the other two regions. The gate region in MOSFET is highly insulated and a very small electric field can switch on or off the current. The IRFI9Z14G consists of N-channel enhancement-type vertical DMOSFETs which use less voltage than traditional FETs.

The main advantage of IRFI9Z14G devices is their wide range of operating temperature, making them suitable for use in automotive, industrial and consumer electronics. Furthermore, they are immune to both Electro-Magnetic Interference (EMI) and Electro-Static Discharge (ESD). This makes them indispensable for use in motor control circuits and high-performance computing. As a result, they are very reliable in harsh conditions, providing high-frequency stability, low harmonic distortion and high noise immunity.

The IRFI9Z14G also requires less gate charge than other MOSFETs and its frequency stability is higher as compared to lower voltage MOSFETs. This makes it extremely suitable for use in power switching applications. Additionally, the device has high breakdown voltage, low on-resistance, and low gate charge, which offer improved efficiency in power switching. The device also offers excellent thermal performance and can operate at high temperatures.

Overall, the IRFI9Z14G has high chemical stability and excellent reliability and is thus ideal for use in long-term applications. Its unique performance characteristics make it perfect for applications such as AC-DC converters, switched-mode power supplies, motor control circuits, and voltage-regulating circuits. Due to its enhanced features, it is increasingly used in automotive, industrial and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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