Allicdata Part #: | IRFI620GPBF-ND |
Manufacturer Part#: |
IRFI620GPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 4.1A TO220FP |
More Detail: | N-Channel 200V 4.1A (Tc) 30W (Tc) Through Hole TO-... |
DataSheet: | IRFI620GPBF Datasheet/PDF |
Quantity: | 908 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.1A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFI620GPBF is a high-voltage P-Channel enhancement-mode MOSFET that is optimized for high-speed switching applications. It has superior switching speed and low on-state resistance with a very low gate charge that make it suitable for many applications. The device can be found in an extremely wide range of applications, including power cycling, power management, communication, audio and video, industrial, automotive, and space applications.
Basic Working Principle of IRFI620GPBFThe IRFI620GPBF is a P-channel enhancement-mode MOSFET, meaning it is composed of a channel built between a source and a drain. This channel is connected to the gate where a positive voltage is applied to activate the MOSFET. This connection in the IRFI620GPBF affects the conductivity of the channel, which increases when a positive voltage is applied.
When the gate of the MOSFET is open, no current flows through the channel. However, when the gate is closed, current flows from the source to the drain. The IRFI620GPBF features low on-state resistance and a very low gate charge to ensure efficient current flow and improved performance.
Application FieldThe IRFI620GPBF MOSFET has a variety of applications in many different industries. It can be found in automotive systems, where it is used to control the power outputs of vehicle engines. It is also used in industrial equipment such as pumps, motors and compressors, where it is used to control the current flow.
The device is also used in communication systems, including Wi-Fi routers, modems and telephone systems, where it is used to control the power output and increase performance. IRFI620GPBF is also used in audio and video equipment, such as amplifiers, speakers and television sets, where it plays a vital role in enhancing the performance and audio quality of the equipment.
The device is also found in space systems, used to control the power output of satellites in space. And lastly, in power cycling applications, the MOSFET is used to switch between on and off states in order to control the power output.
ConclusionThe IRFI620GPBF is a high-voltage P-Channel enhancement-mode MOSFET that is optimized for high-speed switching applications. It has a low on-state resistance and a very low gate charge that make it suitable for many applications. The device can be found in an extremely wide range of applications, including power cycling, power management, communication, audio and video, industrial, automotive, and space applications.
The specific data is subject to PDF, and the above content is for reference
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