IRFIBF20G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	490pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	8 Ohm @ 720mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1.2A (Tc)
Drain to Source Voltage (Vdss):	900V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction
The IRFIBF20G is an Integrated Gate Field Effect Transistor (IGFET) that is available through the International Rectifier Corporation in a range of forms, including dual-gate, single-gate and N-Channel or P-Channel transistors. This component is a type of field-effect transistor (FET) that is used in a range of electronic devices. Many applications, including automotive and marine components, require an FET component as it provides an efficient and reliable way of switching power or signals. This article will provide an overview of the IRFIBF20G and provide details on its applications and working principle.
Applications
The IRFIBF20G offers a wide range of applications in different industries including consumer electronics, automotive, and computing. It can provide a reliable and efficient method for High-Definition Multimedia Interface (HDMI) switching, power switching, and signal transfer. The component can be used for gate driver circuits, switch mode power supplies, engine management systems, and pulse transformer circuits, making it a versatile component for many different industrial and consumer applications. Additionally, the component is used in RF, microwave and analog circuit designs, offering excellent reliable performance.
Working Principle
The working principle of the IRFIBF20G is based on the standard two-terminal Field Effect Transistor (FET) design. This component has two input terminals, the gate and drain, and one output terminal, the source. When a voltage is applied to the gate, it creates an electric field through the oxide barrier between the gate and drain electrodes, resulting in a high current at the drain. This current is applied to a load connected to the output terminal, which then produces an output signal. The FET also effectively controls both voltage and current levels, making it an efficient control component.
Conclusion
The IRFIBF20G is a type of FET component that is used in many different industrial and consumer electronics applications. It offers reliable switching performance, with high levels of efficiency and durability. The component works by creating an electric field through the oxide barrier between the gate and drain electrodes, allowing currents to be applied, and provides excellent control of both voltage and current levels. This makes it a reliable, efficient, and cost-effective solution for many different applications.

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