IRFIBF30G Allicdata Electronics
Allicdata Part #:

IRFIBF30G-ND

Manufacturer Part#:

IRFIBF30G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 900V 1.9A TO220FP
More Detail: N-Channel 900V 1.9A (Tc) 35W (Tc) Through Hole TO-...
DataSheet: IRFIBF30G datasheetIRFIBF30G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFIBF30G Application Field and Working Principle

Independent and Radically Fabulous Infinitely Before F30G (IRFIBF30G) is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) used in electronic circuits. It is a high-power, single-channel MOSFET that can handle high voltages and high switching frequencies up to 6 GHz.

MOSFETs like the IRFIBF30G are widely used in many different applications, ranging from power control in robotics, automation and motor control, to high-power audio amplifiers, switching supplies and lighting control. The IRFIBF30G’s unique properties make it an ideal choice for high-power applications that require precise, fast switching and high efficiency.

Working Principle

The IRFIBF30G is a single-channel MOSFET, which means it has one gate, one drain and one source terminal. Its operating principle is similar to that of a traditional field effect transistor (FET), in which a voltage applied to the gate terminal induces an electric field that controls the current flow from the source to drain.

However, unlike a traditional FET, the IRFIBF30G uses a metal-oxide-semiconductor structure for its gate, which allows for higher switching speeds and greater control over the current flow. Unlike a traditional FET, the IRFIBF30G also has a "body" terminal, which allows for better heat dissipation and a greater range of operating voltages.

Benefits and Applications

The IRFIBF30G’s high-power capabilities, fast switching speeds and versatile design make it an ideal choice for a wide range of applications. Its high power capabilities mean it can be used in high-power applications such as industrial motor control, as well as power control and automation. The fast switching speeds make it well suited for audio amplifiers, switched-mode power supplies and lighting control applications. Finally, the flexibility and robust nature of the MOSFET make it suitable for a variety of other applications, including automotive, aerospace and military applications.

In addition to its wide range of applications, the IRFIBF30G also offers some additional benefits. Due to its robust construction and ability to dissipate heat, it is well suited for high frequency and high power applications. The IRFIBF30G also has a high frequency linearity and low resistance, which makes it well suited for switching supplies, power control, and audio amplifiers. Finally, the IRFIBF30G has an extremely low power consumption, which makes it suitable for battery applications.

Conclusion

The IRFIBF30G is a high-power single-channel MOSFET with a wide range of applications. Its fast switching speeds, wide operating wattage and versatile design make it an ideal choice for many high-power and automotive applications. Its robust construction and ability to dissipate heat make it suitable for a variety of high power, high frequency and battery applications.

Overall, the IRFIBF30G is a highly versatile and powerful MOSFET that is ideal for demanding applications that require precision, fast switching, and high efficiency.

The specific data is subject to PDF, and the above content is for reference

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