
Allicdata Part #: | IRFIBF30GPBF-ND |
Manufacturer Part#: |
IRFIBF30GPBF |
Price: | $ 2.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 900V 1.9A TO220FP |
More Detail: | N-Channel 900V 1.9A (Tc) 35W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 674 |
1 +: | $ 2.91000 |
10 +: | $ 2.82270 |
100 +: | $ 2.76450 |
1000 +: | $ 2.70630 |
10000 +: | $ 2.61900 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.7 Ohm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.9A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFIBF30GPBF transistor is a type of field effect transistor (FET) widely used in electronics today. It belongs to a family of devices known as metal-oxide-semiconductor field-effect transistors (MOSFETs). FETs, in general, are electronic devices used both to obtain higher switching speeds and larger current handling capacity than possible with relays and bipolar transistors. The IRFIBF30GPBF is a single MOSFET transistor.
In terms of usage, FETs are very common and are used in a wide range of applications, from simple switching circuits to complex integrated circuits. Most applications require some type of amplifier or voltage regulator. The amplifier provides voltage or current gain and the regulator preserves a constant voltage and current output regardless of the changes in the input. The IRFIBF30GPBF\'s switching ability makes it an ideal choice for both applications.
With regards to how it works, FETs are three-terminal devices that consist of a channel over which the current moves, typically between source and drain. The gate terminal is isolated and insulated from the channel, with voltage applied to it to regulate the flow of current through the channel. In the IRFIBF30GPBF, the gate offers a high input impedance, capable of handling high voltages on the gate, which allows it to function as a voltage regulator. The gate is also able to handle very small voltages, due to the high input impedance, allowing it to function as an amplifier.
The IRFIBF30GPBF has a couple of interesting features that set it apart from other FETs. It has a low threshold drain-source voltage, which makes it a great choice for use in small switching circuits. It also has a high power dissipation, meaning it can handle a large amount of current without overheating, making it well suited for high-power applications. Finally, it has a low parasitic Capacitance when compared to other FETs. This feature makes the IRFIBF30GPBF an excellent choice for use in fast switching applications.
In conclusion, the IRFIBF30GPBF is a single-gate MOSFET transistor with a range of applications. Its strong switching ability and low threshold drain-source voltage make it well suited for use in small switching circuits, while its power dissipation capabilities enable it to function as a high-power device. The low parasitic Capacitance is also a great advantage when its used in fast-switching circuits. All these attributes make the IRFIBF30GPBF a superior device in comparison to other FETs.
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