IRFIBF30GPBF Allicdata Electronics
Allicdata Part #:

IRFIBF30GPBF-ND

Manufacturer Part#:

IRFIBF30GPBF

Price: $ 2.91
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 900V 1.9A TO220FP
More Detail: N-Channel 900V 1.9A (Tc) 35W (Tc) Through Hole TO-...
DataSheet: IRFIBF30GPBF datasheetIRFIBF30GPBF Datasheet/PDF
Quantity: 674
1 +: $ 2.91000
10 +: $ 2.82270
100 +: $ 2.76450
1000 +: $ 2.70630
10000 +: $ 2.61900
Stock 674Can Ship Immediately
$ 2.91
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFIBF30GPBF transistor is a type of field effect transistor (FET) widely used in electronics today. It belongs to a family of devices known as metal-oxide-semiconductor field-effect transistors (MOSFETs). FETs, in general, are electronic devices used both to obtain higher switching speeds and larger current handling capacity than possible with relays and bipolar transistors. The IRFIBF30GPBF is a single MOSFET transistor.

In terms of usage, FETs are very common and are used in a wide range of applications, from simple switching circuits to complex integrated circuits. Most applications require some type of amplifier or voltage regulator. The amplifier provides voltage or current gain and the regulator preserves a constant voltage and current output regardless of the changes in the input. The IRFIBF30GPBF\'s switching ability makes it an ideal choice for both applications.

With regards to how it works, FETs are three-terminal devices that consist of a channel over which the current moves, typically between source and drain. The gate terminal is isolated and insulated from the channel, with voltage applied to it to regulate the flow of current through the channel. In the IRFIBF30GPBF, the gate offers a high input impedance, capable of handling high voltages on the gate, which allows it to function as a voltage regulator. The gate is also able to handle very small voltages, due to the high input impedance, allowing it to function as an amplifier.

The IRFIBF30GPBF has a couple of interesting features that set it apart from other FETs. It has a low threshold drain-source voltage, which makes it a great choice for use in small switching circuits. It also has a high power dissipation, meaning it can handle a large amount of current without overheating, making it well suited for high-power applications. Finally, it has a low parasitic Capacitance when compared to other FETs. This feature makes the IRFIBF30GPBF an excellent choice for use in fast switching applications.

In conclusion, the IRFIBF30GPBF is a single-gate MOSFET transistor with a range of applications. Its strong switching ability and low threshold drain-source voltage make it well suited for use in small switching circuits, while its power dissipation capabilities enable it to function as a high-power device. The low parasitic Capacitance is also a great advantage when its used in fast-switching circuits. All these attributes make the IRFIBF30GPBF a superior device in comparison to other FETs.

The specific data is subject to PDF, and the above content is for reference

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