Allicdata Part #: | IRFIZ24NPBF-ND |
Manufacturer Part#: |
IRFIZ24NPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 14A TO220FP |
More Detail: | N-Channel 55V 14A (Tc) 29W (Tc) Through Hole TO-22... |
DataSheet: | IRFIZ24NPBF Datasheet/PDF |
Quantity: | 2778 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220AB Full-Pak |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 29W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 7.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FETs (Field-Effect Transistors) are a type of transistor widely used in the electronics industry. The IRFIZ24NPBF is a single N-channel Enhancement-mode Field-Effect Transistor (FET) designed for analog and digital switching applications. It has superior switching characteristics and is widely used in AC and DC power management, motor control, and other switching applications.
IRFIZ24NPBF Application Field
The IRFIZ24NPBF can be used in a variety of applications including power supplies, DC motor control, AC motor control, and power switching. It is particularly well-suited to applications that require high-current carrying capabilities, such as DC power supplies and motor control applications. The IRFIZ24NPBF utilizes a rugged, low-cost package and is well-suited to precision AC and DC motor control applications.
Advantages of IRFIZ24NPBF
The IRFIZ24NPBF has many advantages over other types of transistors. It offers superior switching characteristics, enabling high current carrying capability. It also has excellent thermal stability and an exceptionally high breakdown voltage. Additionally, the IRFIZ24NPBF offers a wide range of package sizes, allowing for greater flexibility and design versatility.
IRFIZ24NPBF Working Principle
The IRFIZ24NPBF works on the principle of a voltage-controlled FET (Field Effect Transistor). A voltage from the gate terminal is then applied to a conducting Silicon channel between the source and drain terminals. This creates an electric field between the source and drain, which controls the current between the two. Higher voltages result in higher currents, allowing for excellent dynamic control over current.
When a negative voltage is applied to the gate terminal, the electric field decreases and current through the channel is reduced and the device is in cutoff. The IRFIZ24NPBF is an enhancement-mode device, meaning that the current between the two terminals is only increased by applying a positive voltage to the gate terminal.
Conclusion
The IRFIZ24NPBF is a single N-channel Field-Effect Transistor (FET) designed for analog and digital switching applications. It offers superior switching characteristics and is widely used in AC and DC power management, motor control, and other switching applications. Due to its high current carrying capabilities, it is particularly well-suited to precision AC and DC motor control applications. It works on the principle of a voltage-controlled FET utilizing an electric field between the source and drain to control the current.
The IRFIZ24NPBF offers many benefits over other types of transistors, including excellent thermal stability, an exceptionally high breakdown voltage, and a wide range of package sizes. Its superior switching characteristics and high current carrying capabilities make it an ideal choice for applications requiring precision AC and DC motor control.
The specific data is subject to PDF, and the above content is for reference
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IRFI530N | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 12A TO22... |
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