Allicdata Part #: | IRFI634G-ND |
Manufacturer Part#: |
IRFI634G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 5.6A TO220FP |
More Detail: | N-Channel 250V 5.6A (Tc) 35W (Tc) Through Hole TO-... |
DataSheet: | IRFI634G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 450 mOhm @ 3.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFI634G Application Field and Working Principle
IRFI634G is a N-channel MOSFET, or metal-oxide-semiconductor field-effect transistor, developed by International Rectifier Corporation. It is designed to perform load-switching, amplifier, or other high power applications. IRFI634G has large drain current capability and low drain-source on-resistance, and it is also designed with small body size.
IRFI634G can be used as either a load or a solid-state device, and it can be used to control power supplies, motor drives, and switching regulators by providing linear current control, voltage control, current monitoring, etc. This type of MOSFET is suitable for power applications in various industries, including Automotive, Telecom and Industrial, as well as for switching in residential, commercial and industrial applications.
This MOSFET also enables efficient power switching through its low on-state resistance, high frequency capacity and low gate charge. As a result, it can switch between high and low loads quickly.
The operation of MOSFETs and IRFI634G is based on the principle of a majority carrier. A majority carrier is an electron or a hole that can travel through the semiconductor material, usually silicon, using the presence of metal-oxide-semiconductor field-effect transistor. The majority carriers are attracted by a voltage applied to the gate of the MOSFET. The number of majority carriers increases as the voltage on the gate increases. When the majority carriers are increased, they form a channel, which in turn enhances the conductivity of the semiconductor material.
When the voltage is applied to the gate of the IRFI634G, majority carriers are attracted to the gate and form a conductive channel. This, in turn, causes current to flow from the drain to the source, thus switching the power to the load. This MOSFET is designed to have a high gate threshold voltage, which means that it can be used in applications where a large voltage is required for switching power. The fast switching speed of this MOSFET is also an advantage in certain applications.
The IRFI634G can be used in a variety of applications, such as audio amplifiers, voltage-controlled switches, power converters and motor drives. Because it is designed with high power handling capability, it can be used in applications in harsh environment, such as industrial and automotive applications. The low on-state resistance and high off-state resistance of this MOSFET makes it suitable for high power applications.
The IRFI634G is a widely used MOSFET due to its wide application field and fast switching speed. It is widely used in both commercial and industrial applications, where it is suitable for power switching, motor drives and voltage control. Furthermore, its wide drain current handling capability and low gate charge enable it to switch power quickly and efficiently.
The specific data is subject to PDF, and the above content is for reference
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