IRFI9630GPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	35W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	700pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	800 mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.3A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

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IRFI9630GPBF is an N-channel field-effect transistor (FET) manufactured by International Rectifier, a subsidiary of Infineon Technologies. The device has a threshold voltage rating of -3.5 volts and a drain-source breakdown voltage of 60 volts. It is suitable for use in low power applications and is designed for a wide range of circuits like switching, amplifying and driving in varying applications.The IRFI9630GPBF is an offshore manufacturing version of the International Rectifier’s IRF630GPBF transistor. It is an N-channel enhancement-mode vertical D-MOS FET (field-effect transistor). The FET is pin-compatible with most Sot-223, Sot-89, Sot-89-3, and TO-218 components. This device is typically used in different applications such as DC-DC converters, power and signal switching, signal amplification, power amplifiers, and polarity switching. This FET has a drain-source breakdown voltage (BVds) rating of 60-volts and a drain-source on-state resistance rating of 0.395-ohm. With its 50-ampere continuous drain current (ID) rating, this transistor can handle up to 60 watts of power dissipation. It also has a relatively low threshold voltage of -3.5 volts at 25-degree Celsius and a low gate-source capacitance rating of 16-pF. The IRFI9630GPBF FET is specifically designed for power electronic applications where the drain-source breakdown voltage is important. Its maximum drain current rating makes it suitable for medium power applications such as driving motors and lamps, as well as providing up to 50-ampere level current sinking and current-sourcing capability. Its low switching speed and fast turn-off characteristics make it ideal for both low and medium frequency switching applications. The IRFI9630GPBF FET is designed to work within a wide temperature range of -40 to 125-degrees Celsius. It has a high-switching frequency, low gate charge, low gate threshold voltage and low on-resistance making it ideal for low-level switching and high-frequency applications. It also offers good noise immunity and ESD protection making it suitable for a variety of applications. The IRFI9630GPBF provides an economical, low power and efficient alternative for power control in medium power applications. Its low threshold voltage, low on-state resistance, high voltage drive capability and its wide temperature range make it suitable for many types of applications from power supplies, power converters, lighting applications and more. Due to its numerous features and competitive pricing, the IRFI9630GPBF is an ideal solution for many power control design engineers today.

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