Allicdata Part #: | IRFIZ46G-ND |
Manufacturer Part#: |
IRFIZ46G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 50V TO-220FP |
More Detail: | N-Channel 50V Through Hole TO-220-3 |
DataSheet: | IRFIZ46G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
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The IRFIZ46G is a member of the International Rectifier FET family. It is known as a single MOSFET, meaning it contains one main gate, channel and drain. The IRFIZ46G is designed to be used in logic level applications that require high current carrying capacity and low power consumption. Some of the features of the IRFIZ46G include fast switching speeds, low on resistance, low gate charges, low thermal resistance and high current carrying capacity.
The IRFIZ46G is mainly used in applications requiring high efficiency, low heat generation and low voltages. It is popularly used in synchronous buck, buck boost regulators, DC-DC converters, Class D, D-A/A-D converters, switching amplifiers, polarity protection and high-speed switching. The IRFIZ46G also makes a good choice for level shifters, power timers, EMI filters, and for providing a low input threshold for logic gates. More generally, the IRFIZ46G is a suitable part for switching and linear applications requiring efficient and low noise operation.
The working principle of the IRFIZ46G is based on the effects of the electric field between drain and source layers. When a positive voltage is applied to the gate, there is an electric field generated with which minority carriers are injected into the drain-channel. As a consequence, the electron mobility increases and the current flow through the FET increases. This so-called “electron injection” mechanism is the basis of the working principle behind the IRFIZ46G.
The main application areas of the IRFIZ46G are in power systems and industrial nodes. In power systems, the IRFIZ46G is used for different applications such as switching and signal conditioning, DC to DC conversion, protection and audio amplification. In industrial nodes, the IRFIZ46G is used for a variety of applications such as signal conditioning, signal protection and voltage regulation.
The major characteristics of the IRFIZ46G include its low on-resistance values, low gate charge, low drain-source capacitance, and its low thermal resistance. In terms of operation, the device is able to operate at frequencies up to 500 KHz, with a total gate charge of 1.25pC. It also features a peak current up to 88A and a breakdown voltage of up to 55V.
In conclusion, the IRFIZ46G is a single MOSFET designed and optimized for power systems and industrial applications. It ensures a low on-resistance, low gate charge and low thermal resistance. The device is capable of operating at frequencies up to 500 KHz, with a total gate charge of 1.25pC and a breakdown voltage of up to 55V.
The specific data is subject to PDF, and the above content is for reference
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