IRFIB41N15DPBF Allicdata Electronics
Allicdata Part #:

IRFIB41N15DPBF-ND

Manufacturer Part#:

IRFIB41N15DPBF

Price: $ 0.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 41A TO220FP
More Detail: N-Channel 150V 41A (Tc) 48W (Tc) Through Hole TO-2...
DataSheet: IRFIB41N15DPBF datasheetIRFIB41N15DPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.95000
10 +: $ 0.92150
100 +: $ 0.90250
1000 +: $ 0.88350
10000 +: $ 0.85500
Stock 1000Can Ship Immediately
$ 0.95
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFIB41N15DPBF is a high-performance, low-input resistance and high-speed switch field-effect transistor with a low gate-to-drain capacitance of 30 pF. It is a N-type MOS device/Field-Effect Transistor (FET) that is able to be used in many different applications. This device is available in both standard (IRFIB41N15DPBF) and Super (SIRFIB41N15DPBF) packages.

There are many field application areas where this device can be used. It can be used in switching applications, low-frequency amplifiers, and low noise circuits, as well as power applications. It is particularly suitable for driver applications, where its low input resistance, high speed switching and low gate-to-drain capacitance make it a great choice.

The good linearity, high speed switching, and low input resistance of the IRFIB41N15DPBF make it an ideal choice for use in amplifier circuits. Its low channel capacitance ensures low noise and distortion, making it suitable for use in audio amplifiers and other audio applications.

The IRFIB41N15DPBF is also suitable for use in power applications, such as those used in the automotive industry. Its low on-resistance and low gate charge make it a good choice for high-power switching applications, such as those used in power supplies and motor control circuits.

The IRFIB41N15DPBF has a low gate threshold voltage, making it suitable for use in switching circuits where low voltage is needed. It also has a low gate input capacitance, which makes it suitable for high-speed switching applications. Its low on-resistance and low gate charge also make it a good choice for use in motor control circuits, allowing the device to switch quickly and efficiently.

The working principle of the IRFIB41N15DPBF is based on the same principle as all other MOSFETs. A voltage is applied to the gate of the device, which causes a current to flow between the source and drain. This current is proportional to the applied voltage, and is what allows this device to be used in various applications. The resistance of the IRFIB41N15DPBF is based on the size of its channel, which can be adjusted easily using its gate voltage.

Compared to traditional transistors, the IRFIB41N15DPBF offers improved performance and reliability. Its low on-resistance, low gate charge, and low gate threshold voltage make it a great choice for many applications. The low-input resistance and high-speed switching mean it can be used in a variety of circuits, from audio amplifiers to power supplies. Its low gate-to-drain capacitance makes it a good choice for driver applications. The IRFIB41N15DPBF is a great choice for use in many different applications.

The specific data is subject to PDF, and the above content is for reference

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