Allicdata Part #: | IRFIBC20GPBF-ND |
Manufacturer Part#: |
IRFIBC20GPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 600V 1.7A TO220FP |
More Detail: | N-Channel 600V 1.7A (Tc) 30W (Tc) Through Hole TO-... |
DataSheet: | IRFIBC20GPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.4 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFIBC20GPBF is a trench-gate field-effect transistor (FET) which is a type of MOSFET with a single diffusion layer of resistive material. This FET has a drain-source voltage of 60 V and an on resistance of as low as 55 mΩ. It is a power transistor that can be used to control high-current circuits such as in motor and lighting applications.
The FET is designed for high-current, low-voltage applications and is most commonly used in switching applications for high voltage, high current circuits. The FET is also suitable for applications involving amplification and in switch-mode power supplies where its small size, low on-resistance, and low cost make it attractive for power conversion, motion control, motor drive, and other applications.
The IRFIBC20GPBF works by controlling the potential between a gate and a source terminal. A voltage is applied to the gate that controls the current flow between the source and the drain. As the voltage applied to the gate increases, the current through the device increases. When the voltage is at its peak, the entire device turns on, allowing full current flow through it. When the voltage is at its lowest, the device turns off, completely stopping current flow.
The IRFIBC20GPBF is also known as a “trench-gate” device due to its unique construction. The FET’s gate is composed of deep grooves in the substrate which serves to isolate the source and drain, allowing a higher voltage to be applied to the gate-source. This allows the device to have higher current flow, meaning a better efficiency than traditional planar structures.
The device also features a fast switching time and a very low on-resistance, making it ideal for high-current, low-voltage applications where fast switching times and high efficiency are required. Its low gate capacitance also allows the device to be used in high-frequency applications, where it can operate at up to 1.2 MHz.
In addition, the device has low gate leakage current and low drain-source voltage making it well-suited for battery-powered applications. Its low on-resistance and low power dissipation also makes it an ideal choice for portable electronics such as smartphones and laptops.
The IRFIBC20GPBF’s applications cover a wide range of high-current, low-voltage applications including motor and lighting applications, switch-mode power supplies, power conversion, motion control, motor drive, and other applications where efficient, fast switching and low power dissipation are required.
The specific data is subject to PDF, and the above content is for reference
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