| Allicdata Part #: | IRFIB7N50APBF-ND |
| Manufacturer Part#: |
IRFIB7N50APBF |
| Price: | $ 2.30 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 500V 6.6A TO220FP |
| More Detail: | N-Channel 500V 6.6A (Tc) 60W (Tc) Through Hole TO-... |
| DataSheet: | IRFIB7N50APBF Datasheet/PDF |
| Quantity: | 417 |
| 1 +: | $ 2.09160 |
| 10 +: | $ 1.88874 |
| 100 +: | $ 1.51780 |
| 500 +: | $ 1.18052 |
| 1000 +: | $ 0.97815 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 60W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1423pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 520 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.6A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRFIB7N50APBF is a common type of field effect transistor, or FET. It is a single type of MOSFET, which stands for Metal-Oxide-Silicon Field Effect Transistor. The IRFIB7N50APBF is a lateral Diffused MOS (DMOS), which is a specific type of FET that is designed to switch power efficiently. It can be used in applications such as motor control, battery powered devices and voltage regulation.
The IRFIB7N50APBF is a N-channel device, meaning that the transistor is made up of a single active region consisting of P-type material, with an N-type material forming the “body”.
Because it is a lateral DMOS, both the source (S) and drain (D) are located on the same side of the transistor. This means that the channel is not completely surrounded by both an N-type body and a P-type body, as is the case with a vertical DMOS. By comparison, a vertical DMOS FET would require two masking operations to create the S and D regions, whereas the IRFIB7N50APBF requires only one.
The working principle of the IRFIB7N50APBF is simple: electrons are forced away from the P-type material, which causes a current to flow in the channel between the S and D. This current is regulated by the voltage applied to the gate terminal, which adjusts the number of electrons repelled away from the P-type material. This regulates the flow of current in the channel and controls the amount of current that passes through the FET, making it ideal for power switching applications.
The IRFIB7N50APBF is a versatile device, with a wide range of applications. It is often used in motor control circuits, such as those found in power tools, electric vehicles and industrial equipment. The FET can also be used to provide the necessary power for battery powered devices, and is often used in voltage regulation circuits for providing stable and efficient power to a given load. It can also be used in power management circuits, such as those found in laptop computers.
The IRFIB7N50APBF is a reliable device with a range of application options. It is a reliable choice for many power switching and voltage regulation applications, and is easy to use thanks to its simple working principle. With its versatility and ease of use, the IRFIB7N50APBF is an ideal choice for many electronic applications.
The specific data is subject to PDF, and the above content is for reference
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IRFIB7N50APBF Datasheet/PDF