| Allicdata Part #: | IRFI9530GPBF-ND |
| Manufacturer Part#: |
IRFI9530GPBF |
| Price: | $ 1.51 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 100V 7.7A TO220FP |
| More Detail: | P-Channel 100V 7.7A (Tc) 42W (Tc) Through Hole TO-... |
| DataSheet: | IRFI9530GPBF Datasheet/PDF |
| Quantity: | 1070 |
| 1 +: | $ 1.51000 |
| 10 +: | $ 1.46470 |
| 100 +: | $ 1.43450 |
| 1000 +: | $ 1.40430 |
| 10000 +: | $ 1.35900 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 300 mOhm @ 4.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7.7A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRFI9530GPBF (infineon mosfet) is a power MOSFET transistor used in various applications. The IRFI9530GPBF is a single independent MOSFET transistor manufactured using advanced Infineon process technology. It is optimized for low-voltage, low RDS(on) and fast switching applications. The MOSFET transistor has been designed to provide the best performance and highest attainable power efficiency.
The IRFI9530GPBF is specifically designed for operation in the range of 10 V to 30 V and has a maximum drain-source voltage of VDS = 55 V. It also has a drain-source on-resistance (RDS) of only 0.73 ohms with a gate-source driving voltage (VGS) of 4.5 V. It is designed to provide high efficiency and current limiting capabilities to application circuitry. It is also designed to minimize power losses by providing low on-state resistance, minimal switching delays, and low gate charge.
Since this MOSFET transistor can handle a wide range of voltages and current, it can be used in various applications such as automotive and industrial motor drives, high-power converter circuits, and DC-DC converters. Additionally, it is useful in switching power supplies, solar inverters and battery chargers, as well as in communications and other power management applications.
The working principle of a MOSFET transistor is based on the ability of the gate voltage to control the flow of current between the drain and the source. When a positive potential is applied to the gate, it generates an electric field between the gate and the substrate, which affects the semiconductor molecules between them. This affects the conduction through the transistor and allows for current flow to be controlled by varying the gate voltage.
In the IRFI9530GPBF, the gate capacitance value is relatively low, enabling fast switching and operation even at high frequencies. Furthermore the low on-resistance provides high efficiency and reduces power losses. The gate capacitance is also adjustable, allowing for easy customization of the transistor for specific application requirements.
Overall, the IRFI9530GPBF single MOSFET transistor is an excellent component for a range of power management applications because of its high performance and low power losses. Specifically, the low RDS(on) and relatively low gate capacitance make it ideal for applications that require high speed operation and high efficiency operation.
The specific data is subject to PDF, and the above content is for reference
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IRFI9530GPBF Datasheet/PDF