Allicdata Part #: | IRFR010TRLPBF-ND |
Manufacturer Part#: |
IRFR010TRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 50V 8.2A DPAK |
More Detail: | N-Channel 50V 8.2A (Tc) 25W (Tc) Surface Mount D-P... |
DataSheet: | IRFR010TRLPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 4.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.2A (Tc) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRFR010TRLPBF is a powerful field effect transistor (FET) component which is typically used in electric circuits. It is a single device, which is usually integrated into other larger devices for the purpose of managing current and power. This article looks at the application field and working principle of the IRFR010TRLPBF.
The main application of the IRFR010TRLPBF is in the amplification and switching of digital electronics signals, particularly in high frequency systems such as radio frequency (RF) circuits. As an example, the IRFR010TRLPBF can be found in frequency mixers, pre-amplifiers, radio transmitters and receivers and other RF systems. Due to its versatility and performance, the IRFR010TRLPBF is often sought after by researchers and engineers similar across the electronics industry.
The IRFR010TRLPBF is a n-channel enhancement mode FET. This type of FET works by using an electric field, created by the gate voltage, to control the flow of current through the channel of the transistor.
When the gate voltage is at or below the threshold voltage (Vth) of the transistor, the channel is in the off-state and very few electrons, if any, are travelling through the channel. When the gate voltage is above the threshold voltage, the channel will open and electrons will start to move through the channel. At this point, the channel of the transistor is said to be in the linear region.
Once the gate voltage reaches a certain point, the channel of the transistor will start to saturate. This means that the current flowing through the channel will start to increase exponentially. This is known as saturation mode and is the most efficient form of operation for the transistor.
Although the IRFR010TRLPBF is mainly used for its switching and amplifying capabilities, it is also suitable for other applications, such as frequency modulation and phase shifting. This versatility makes it a very useful device across a range of applications.
The IRFR010TRLPBF transistor is a single device, which means it can only be integrated into larger devices in order to achieve the desired result. This is usually achieved by connecting the device to other components on a circuit board. It is important to keep in mind that the IRFR010TRLPBF must be used in conjunction with other components in order to gain its full potential.
In conclusion, the IRFR010TRLPBF is a powerful field effect transistor that can be used in the amplification and switching of digital electronic signals. It is useful in a range of applications, such as frequency mixers, pre-amplifiers, radio transmitters and receivers and other RF systems. Although a powerful device, it must be used in conjunction with other components in order for it to realise its full capabilities.
The specific data is subject to PDF, and the above content is for reference
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