![IRFR13N20DPBF Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRFR13N20DPBF-ND |
Manufacturer Part#: |
IRFR13N20DPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 13A DPAK |
More Detail: | N-Channel 200V 13A (Tc) 110W (Tc) Surface Mount D-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 830pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 235 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IRFR13N20DPBF is a part of a specific type of transistor, and it operates on a certain surface of a semiconductor material. It is a part of a family of Field Effect Transistors, commonly referred to as FETs. FETs are used in all types of electronic devices, from large scale industrial systems to consumer electronics. The IRFR13N20DPBF is an NMOSFET, a type of FET that uses an insulated gate to control the electrical currents. This type of FET is a single transistor that provides high current gain and low switching times.
The IRFR13N20DPBF is designed to be used in many different applications. It is used in power switching, power management, linear control, low-noise amplifiers, and high-voltage applications. The high current gain and low switching times make it a good choice for these power applications. It is also used in non-potential applications, such as gate driving and charging. The low-noise characteristics make it a perfect choice for low-noise applications.
The working principle of an NMOSFET is based on the fact that when a gate voltage of a certain magnitude is applied to the FET, a voltage drop between the drain and source of the FET is created. This voltage drop, in turn, causes a current to flow through the transistor, depending on the magnitude of the gate voltage. When the gate voltage is removed, the voltage between the drain and source will be equalized and the current will cease to flow.
The IRFR13N20DPBF is designed to be used in applications that require high current gain and low switching times. It is a good choice for high-power applications and non-potential applications. It can provide a large amount of current, and it has low-noise characteristics, making it a good choice for low-noise applications as well. It is also relatively inexpensive, making it an attractive choice for a variety of applications.
The IRFR13N20DPBF is an excellent choice for a variety of applications. It can provide high current gain and low switching times, making it a good choice for power applications. It can also provide low-noise characteristics, making it a good choice for non-potential applications. With its low cost and high availability, the IRFR13N20DPBF is an excellent choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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