Allicdata Part #: | IRFR220TRLPBFTR-ND |
Manufacturer Part#: |
IRFR220TRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 4.8A DPAK |
More Detail: | N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surfa... |
DataSheet: | IRFR220TRLPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.8A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFR220TRLPBF is an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) device. It has a single type and is categorized as a general purpose MOSFET. Its useful features include low power consumption and high-frequency switching, along with thermal stability, fast switching speed and excellent avalanche characteristics. This MOSFET is widely used in audio, visual, and automotive electronics. IRFR220TRLPBF is widely used in small voltage and low-conductivity applications. Its electrical parameters are guaranteed over a wide temperature range.
IRFR220TRLPBF has a three-terminal connection and the drain terminal provides the output power. The source terminal is considered to be the ground which provides a return path for the electric current flow. The gate terminal is a control terminal that is used to regulate the current flow to the drain terminal. The gate terminal is connected to a voltage source that controls the output current.
The working principle of IRFR220TRLPBF consists of the electric field from the gate terminal that modulates the thickness of the oxide layer between its source and drain. This voltage modulation changes the relation between the waveforms of drain and source voltage by changing the resistance between the source and drain. This changes the current flow from source to drain and modulates the output current.
The working of IRFR220TRLPBF can be explained by the following example. Suppose a sinusoidal waveform is applied to the gate terminal, it creates an electric field across the oxide layer. This electric field creates a voltage waveform at the drain terminal that is modulated to a frequency of the applied voltage waveform. The magnitude of the current flow from source to drain depends on the magnitude of the field and the thickness of the oxide layer.
I FRFR220TRLPBF can be used in various applications. One of the most popular applications is motor drivers. This device can be used to control the speed of a DC motor. It is also used in power control applications such as LED headlights, lighting control, air conditioner control and security systems. IRFR220TRLPBF is also useful in power switching applications, such as portable device power switches, AC/DC adaptors, and switching regulators.
In conclusion, IRFR220TRLPBF is an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) device with a single type and is categorized as a general-purpose MOSFET. It can be used in various applications such as motor drivers, power control applications, power switching applications, and many more. The working principle of IRFR220TRLPBF consists of the electric field from the gate terminal that modulates the thickness of the oxide layer between its source and drain. This changes the current flow from source to drain and modulates the output current.
The specific data is subject to PDF, and the above content is for reference
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