IRFR3704TRR Allicdata Electronics
Allicdata Part #:

IRFR3704TRR-ND

Manufacturer Part#:

IRFR3704TRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 75A DPAK
More Detail: N-Channel 20V 75A (Tc) 90W (Tc) Surface Mount D-Pa...
DataSheet: IRFR3704TRR datasheetIRFR3704TRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRFR3704TRR Application Field and Working Principle

IRFR3704TRR is a type of insulated gate Field Effect Transistor (IGFET), a transistor that utilizes an insulated gate to control the conductivity level between the source and drain electrodes. It is a N-channel enhancement mode transistor commonly used in analog and digital circuits. It is manufactured mainly by Infineon Technologies, a leading supplier of chip-packaged transistors.

IRFR3704TRR transistors have been used in a host of applications, from switching audio signals to controlling motor loads and power supplies. They are especially useful in power management applications, as their low gate threshold voltage helps to minimize energy consumption. In addition, their low-voltage capability and high-current levels make them well-suited for use within automotive, industrial, and consumer electronics applications.

The IRFR3704TRR is comprised of a silicon dioxide insulator layer, on which a gate contact is placed. This contact is then connected to a control terminal. When power is applied to the control terminal, a voltage is generated in the insulator layer, which is then transferred to the gate. This gate voltage can then be used to control the conductivity level between the source and drain. As the gate voltage increases, so too does the current that can flow through the transistor, allowing for the control of current through the drain.

The low-voltage capability of the IRFR3704TRR is one of its most attractive features. It can operate at voltages as low as 2V, yet can handle high-current levels up to 500mA. This makes the device suitable for a variety of applications, as it is able to switch large signal loads while maintaining a low operating voltage. It also exhibits excellent thermal performance and can handle high levels of power dissipation.

The IRFR3704TRR has also been designed with temperature compensation in mind. It has been designed with temperature-compensating oxide layers that can vary the amount of current flow depending on the temperature. This helps to create a more precise and consistent switching performance, even in changing environmental conditions. This feature makes it an ideal choice for applications in which the temperature range of operation is not known in advance.

The IRFR3704TRR is particularly useful for applications that require precise and accurate control of current flow. Its combination of low voltage operation and high current handling capabilities makes it an ideal choice for use in portable electronic devices, as well as for applications in industrial and power management systems. Furthermore, its on-chip temperature compensation ensures consistent performance, even in changing environments. With so many features, it is easy to see why the IRFR3704TRR is such a popular choice for those looking for a practical and reliable IGFET.

The specific data is subject to PDF, and the above content is for reference

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