IRFR3711 Allicdata Electronics
Allicdata Part #:

IRFR3711-ND

Manufacturer Part#:

IRFR3711

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 100A DPAK
More Detail: N-Channel 20V 100A (Tc) 2.5W (Ta), 120W (Tc) Surfa...
DataSheet: IRFR3711 datasheetIRFR3711 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF3711 is a type of power metal–oxide–semiconductor field-effect transistor (MOSFET). It is a widely used component in various circuits, such as motor control, switching, dimming, and power supply. The IRF3711 belongs to a family of MOSFET transistors commonly known as “enhancement mode MOS devices”, because the MOSFET is turned on or off based on the voltage applied to its gate terminal.

Application Field of IRF3711

The IRF3711 is capable of controlling large amounts of power due to its thin oxide layer, which allows for a high voltage breakdown point and low on-resistance. It is widely used in many high-power applications, such as car engines, power supplies, and induction heating circuits. It is also used for driving LEDs, DC motors, and solenoids.

The IRF3711 is suitable for switching modes of current control, where its high gate charge and low gate resistance allow for increased switching frequency. It is also ideal for use in electronic circuits where high current flow is required, such as audio amplifiers and power supplies. The device is also increasingly being used in solar energy applications, such as photovoltaic cell arrays, as its low on-resistance and high maximum current ratings make it well-suited for this purpose.

Working Principle of IRF3711

The IRF3711 is a type of enhancement mode MOSFET, which means that it works under the application of gate voltage. The gate voltage controls the current through the transistor by creating an electric field that changes the conductivity of the Device. When a gate voltage is applied, the current through the device increases, making it easy to switch on and off.

The IRF3711 has a built-in body diode, which allows current to flow in both directions. The diode is designed to be forward-biased, which means that it will turn on at a certain voltage above the forward bias voltage. This makes it ideal for use in circuits where current needs to flow in both directions.

The IRF3711 also features an ESD protection feature, which is designed to protect the device against static electricity. This is achieved by adding a metal plate around the gate pin, or by using a semi-conductive material between the device and the circuit board. This helps to protect the device from damage due to static electricity.

The IRF3711 is relatively easy to use, as it requires only a few components to operate. It is commonly used to control high currents, as its small size and low on-resistance make it ideal for use in power supplies, motor control, and other applications.

The specific data is subject to PDF, and the above content is for reference

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