IRFR3711TRL

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The IRFR3711TRL is a part of Infineon\'sTRENCHSTOP™ IGBT3E family of field effect transistors (FETs). It features low on-state resistance, and an impressive maximum current-carrying capacity, making it ideal for consumer and industrial electronics, appliance, and solar and lighting applications. The IRFR3711TRL is a single N-channel enhancement mode MOSFET with a maximum drain current of 37A and a peak drain-source voltage of 100V. It is also characterized by a low drain-source on-state resistance of 0.1 ohms, a maximum drain-source voltage of 100V, and a minimum gate-source voltage of 4V. In addition, the device has an operating temperature range of -55°C to +175°C, making it well suited for use in both commercial and industrial environments. The device also features an on-resistance temperature coefficient of -13.7 mOhms/°C, meaning that it will remain stable and reliable even in environments with wide temperature ranges.

The IRFR3711TRL operates using a four-layer construction consisting of a floating gate, an oxide layer, a control gate, and a structure that supports the control gate and the oxide layer. This construction enables the device to act as a current or voltage amplifier when its input signals are either voltage or current. The device is also capable of operating in either linear or switching modes, thanks to the floating gate.

When operating in voltage amplifier mode, the device works by allowing a small amount of current to flow from the floating gate to the control gate, thereby allowing the device to function as a voltage amplifier. In switching mode, the device is capable of rapidly switching on and off, allowing it to perform tasks such as switching between different power sources or inverting a signal.

The IRFR3711TRL is ideal for applications requiring the use of high-current and low-voltage FETs. Its impressive on-state resistance enables it to be used for power supply designs, solar inverters, and other consumer and industrial applications. Furthermore, its high peak drain-source voltage allows for more efficient operation in high-voltage applications.

Overall, the IRFR3711TRL is an ideal FET for use in applications requiring high current and low voltage capability. Its low on-state resistance makes it suitable for large-scale power applications, and its four-layer construction enables it to be used for either voltage or current amplification. Additionally, its wide operating temperature range makes it suitable for both commercial and industrial applications.

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