Allicdata Part #: | IRFR3711TRR-ND |
Manufacturer Part#: |
IRFR3711TRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 100A DPAK |
More Detail: | N-Channel 20V 100A (Tc) 2.5W (Ta), 120W (Tc) Surfa... |
DataSheet: | IRFR3711TRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2980pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRFR3711TRR is a single high-side N-Channel Power MOSFET from the series of Power MOSFETs manufactured by International Rectifiers. This is a voltage controlled device that utilizes an insulated Gate Field Effect Transistor (IGFET) for the purpose of controlling the current through the MOSFET. High power densities and low RDS(on) make this device suitable for a variety of applications such as DC-DC converters, power supplies, switching power amplifiers, motor drivers, fan controllers and higher power switching applications.
The IRFR3711TRR is mainly used in switching power supplies. It can be used in both step-down and step-up converters. It can be used to drive loads that require significant input current and can also be used in synchronous rectifier circuits to reduce power losses. The high frequency switching capability makes it suitable for applications where high speed is required such as RF amplifiers and computer power supplies.
The IRFR3711TRR works on the principle of a Field Effect Transistor. It consists of three terminals - the Gate, the Drain and the Source. The Gate terminal is the control pin for the device. It is used to control the flow of current through the device. The Drain terminal is connected to the positive supply terminal of the circuit. The current passes through the device when a voltage is applied at the gate terminal. The Source terminal is connected to the negative supply terminal and completes the circuit.
The IRFR3711TRR has many advantages over other types of transistors. It has low RDS(on) which makes it suitable for high efficiency applications. It can handle high switching frequencies which makes it ideal for high speed applications. Its low gate charge makes it suitable for low power applications. Its high current density makes it suitable for high power applications. It is also less sensitive to noise and external interference, making it a reliable device in harsh environments.
The IRFR3711TRR is used in a variety of applications such as DC-DC converters, power supplies, switching power amplifiers, motor drivers, fan controllers and higher power switching applications. It can be used in both step-down and step-up converters. It can also be used to drive loads that require significant input current and can also be used in synchronous rectifier circuits to reduce power losses. Its high switching frequency makes it suitable for RF amplifiers and computer power supplies. It is ideal for applications where high speed and power density are required. The IRFR3711TRR is one of the most popular MOSFETs available in the market today.
The specific data is subject to PDF, and the above content is for reference
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