Allicdata Part #: | IRFR3711TRRPBF-ND |
Manufacturer Part#: |
IRFR3711TRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 100A DPAK |
More Detail: | N-Channel 20V 100A (Tc) 2.5W (Ta), 120W (Tc) Surfa... |
DataSheet: | IRFR3711TRRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2980pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRFR3711TRRPBF is a silicon-based field-effect transistor (FET) specifically designed for use in high-power switch-mode applications. The device is classified as a single-gate type FET with a single source of supply voltage and a single drain of current. The device operates in a three-region mode, in which it is capable of conducting an electric current by application of an energy signal across the control gate and source terminals.
The operating principle of an IRFR3711TRRPBF is based on the voltage drop between the source and drain terminals. When a voltage is applied to the gate terminal, an electric field is generated between the source and drain. This electric field causes electrons to flow from the source to the drain, thus creating a potential voltage between the two and allowing current to flow.
The IRFR3711TRRPBF is commonly used in high-power electronic switching applications. It is also popular in logic circuits, such as those used in microprocessor-based systems. In these applications, the FET provides excellent switching performance, high-frequency operation, and low power losses.
The device is also popular in audio amplifiers and motor drivers, where it offers excellent performance with low power losses. In addition, the device can be used in some basic signal-processing applications, such as pulse-width modulation and bi-directional switching.
The IRFR3711TRRPBF is also suitable for use in automotive applications, such as ignition systems, as it provides excellent switching performance and is capable of handling high-power switching applications.
It should be noted that the device is not suitable for use in high-current switching applications, as it is designed for low-power switching applications.
In summary, the IRFR3711TRRPBF is a versatile field-effect transistor, popular in high-power switch-mode applications such as logic circuits, audio amplifiers, motor drivers, and pulse-width modulation. Its unique single-gate design provides excellent switching performance, high-frequency operation, and low power losses.
The specific data is subject to PDF, and the above content is for reference
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