Allicdata Part #: | IRFR3711ZTRLPBF-ND |
Manufacturer Part#: |
IRFR3711ZTRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 93A DPAK |
More Detail: | N-Channel 20V 93A (Tc) 79W (Tc) Surface Mount D-Pa... |
DataSheet: | IRFR3711ZTRLPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2160pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 93A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRFR3711ZTRLPBF is a popular and widespread modern transistor, used for a variety of applications in a vast array of industries. This type of transistor is ideal for applications which require low trigger current and fast switching, as well as providing better linearity and stability than similar versions. The transistor is one particular type of field effect transistor (FET) and more specifically, a single-transistor configuration. All this serves to explain why the IRFR3711ZTRLPBF is suitable for multiple application fields.
To understand the IRFR3711ZTRLPBF transistor and its various application fields and working principles, we shall first explore its main properties. This specific type of FET is a P-Channel enhancement mode which has a breakdown voltage rating of 20V and a continuous drain current of 10A. It has a maximum pulsed drain current of 26A and a 22nC charge, with a temperature of -55C to 125C operating temperature. It also features an on-resistance of 11, 3 mOhm, a maximum drain-source off-state voltage of 15V and a Power Dissipation rating of 28 W.
The IRFR3711ZTRLPBF transistor is used to provide control and switching in a variety of applications. It is highly suitable for low power switching, due to its lightweight and low cost design, allowing the application to benefit from consistently fast switching performance. Its low breakdown voltage is also useful, as it means the transistor can be used in voltages where other mosfets are unable to be used. The 22nC charge offers faster switching performance, combined with higher linearity and stability, making the transistor a popular choice for switching applications.
The IRFR3711ZTRLPBF is suitable for a variety of fields due to its side benefits. It has low trigger currents, meaning it can be used to open and close relay contacts, making this transistor a popular choice in automation and control systems. Due to its small size and light weight, it is often used in industrial settings, such as in robotics, where its small form factor and fast response time make it a preferable choice. It is also suitable for consumer electronics, where its durability and reliability make it suitable for applications such as computer power supplies.
The IRFR3711ZTRLPBF is well-suited to applications which require fast commutation and speed of response, as well as offering superb reliability, durability and safety. Due to its robust design, it is capable of providing reliable switching performance, even under load. Its low trigger currents allow for more accurate triggering, ensuring smooth switching performance with not only low power consumption but also superior linearity and stability.
The working principle of the IRFR3711ZTRLPBF is simple. It can be thought of as an electronic switch which is activated by an electric current. When voltage is applied to the drain-source line, current flow begins, and a channel is created between the channel and source regions. This allows for current flowing from the source to the channel, creating a positive voltage drop. When the voltage applied to the junction reaches the threshold of the channel, it turns "on" and current begins to flow in the drain direction.
When voltage is applied to the gate, the electric field created between the gate and the channel allows the channel to open and close, controlling the flow of current. This is referred to as the enhancement mode of operation, and is what makes the IRFR3711ZTRLPBF suitable for a variety of applications. This basic operation of controlling current flow using an electric field makes the IRFR3711ZTRLPBF the ideal choice for many applications.
In conclusion, the IRFR3711ZTRLPBF is a single transistor P-Channel enhancement mode FET which is used for a variety of applications where low trigger current, fast response time and reliable switching is required. It has a breakdown voltage rating of 20V, a continuous drain current of 10A and a maximum pulsed drain current of 26A. It is suitable for many application fields, such as automation and control, industrial robotics, and consumer electronics, and its working principle is fairly straightforward, relying on electric fields to open and close the channel.
The specific data is subject to PDF, and the above content is for reference
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