Allicdata Part #: | IRFR3711ZTRR-ND |
Manufacturer Part#: |
IRFR3711ZTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 93A DPAK |
More Detail: | N-Channel 20V 93A (Tc) 79W (Tc) Surface Mount D-Pa... |
DataSheet: | IRFR3711ZTRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2160pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 93A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRFR3711ZTRR is a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a voltage-controlled field-effect transistor that uses metal gates to control the current flow through an insulated gate. It is a compact device that offers a wide range of features and functions, making it a versatile component for many applications.
Applications of IRFR3711ZTRR
The IRFR3711ZTRR MOSFET is mainly used in high frequency, high power applications. It can be used as a switch, amplifier, or as a motor driver. It is also commonly used in audio and video applications, such as audio amplifiers, audio crossovers, DC power supplies, motor control systems, and voltage regulators.
The IRFR3711ZTRR is also well-suited for use in high-frequency switching applications. It can be used in switching power converters for efficient power mode conversion. Other applications include radio frequency identification (RFID) readers, data communication applications, and automotive body electronics.
Working Principle of IRFR3711ZTRR
The IRFR3711ZTRR MOSFET has an insulated gate that controls the current flow by applying a voltage to the gate. The gate voltage determines the conductivity of the MOSFET, controlling the current flow through the device. The voltage applied to the gate is determined by the resistance between the source and drain terminals.
The gate conducts electricity only when there is a difference in voltage between the gate and the source terminals. When an off-state voltage is applied to the gate, the gate-source transistor junction is reverse biased and the device is in cutoff mode. When the applied voltage is higher than the gate threshold voltage, a positive potential is established and the device turns on, allowing current flow through the MOSFET.
When the gate voltage is increased, the drain-source transistor junction is forward biased and current flow increases. This current flows between the drain and source of the MOSFET, providing the desired device output. The IRFR3711ZTRR MOSFET can be used in either linear or saturation modes and is also capable of low-side switching.
Conclusion
The IRFR3711ZTRR MOSFET is a versatile component with a wide range of applications. It can be used in high frequency and high power applications, such as audio and video, motor control systems, and switching power converters. It can also be used in switching applications, such as RFID readers and data communication systems. The MOSFET has an insulated gate that controls the flow of current through the device, and can be operated in either linear or saturation modes.
The specific data is subject to PDF, and the above content is for reference
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