IRFR4104TRRPBF

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IRFR4104TRRPBF is a single N-channel, 100V, 75mΩ, and a maximum current rating of 11.1A. It is a thermally enhanced high-speed MOSFET from International Rectifier (IR). The device features superior avalanche ruggedness, fast switching, and ultra-low power loss. It is available in two forms: through-hole and surface mount.

Application Field

IRFR4104TRRPBF MOSFET is typically used in DC-to-DC converters, switching applications, Class D amplifiers, load switches, motor drives and power management systems. It can also be used in hot swap and reverse battery protection applications. It is ideal for a wide range of consumer electronic products such as DVD players, LCD TVs, mobile phones, portable media players, laptop computers, and so forth.

Working Principle

IRFR4104TRRPBF MOSFET is a voltage-controlled four-terminal device. When a voltage is applied to the device’s gate, a controlled electric field forms between the source and drain. This creates an inversion layer in the semiconductor material, effectively allowing electrons to flow from the source to the drain. This creates a conduction channel, thus enabling an electrical current to flow between the drain and source.

The device’s gate-source voltage (VGS) will determine the amount of current that can flow through the device. If the gate-source voltage increases, the conduction channel size increases, resulting in a higher current. If the gate-source voltage decreases, the electric field weakens, shrinking the conduction channel. This reduces the amount of current that can flow through the device.

The device can also provide protection against overloading and thermal protection, while still maintaining its fast switching speed. The device’s thermal protection feature helps to protect against thermal runaway. A temperature sensor is integrated into the device. If the device’s temperature exceeds a certain threshold, the device will shut down, preventing further damage.

The device also features a wide range of features that make it suitable for high-power applications: low on-state resistance, low gate-charge, and low capacitance. The device’s low on-state resistance results in increased efficiency in power conversion applications, as well as reduced power dissipation and reduced heating. The device’s low gate-charge results in reduced power loss and reduced switching time. The device’s low capacitance provides improved signal integrity and increased noise immunity.

IRFR4104TRPBF is an ideal device for a wide range of applications, from high-power industrial to entry-level consumer electronic devices. It provides a wide range of features that make it suitable for high-power applications, while still providing low cost and low power consumption. The device is ideal for applications where high speed, low power, and low cost are essential.

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