Allicdata Part #: | IRFR4510TRPBFTR-ND |
Manufacturer Part#: |
IRFR4510TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N CH 100V 56A DPAK |
More Detail: | N-Channel 100V 56A (Tc) 143W (Tc) Surface Mount D-... |
DataSheet: | IRFR4510TRPBF Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 143W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3031pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 13.9 mOhm @ 38A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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IRFR4510TRPBF is an N-channel MOSFET transistor that belongs to the FETs and MOSFETs category. It is typically used in the field of power management, providing high efficiency, stability and reliability. It is one of the most commonly used transistors in a variety of power circuits and has a wide range of applications.
The IRFR4510TRPBF has a snubberless N-channel Trench MOSFET, and its key electrical characteristics include relatively low gate charge Qg, fast switching speed, low Rds(on) and decent current handling capability. It also has a robust package design, with a low profile for better thermal performance. This makes it a good choice for applications requiring high-power operation in crowded spaces.
The IRFR4510TRPBF is a single-form source-gate N-channel MOSFET and the first thing to understand about its working principle is how the various forms and types of MOSFET work. As you may already know, the MOSFET is an insulated gate field-effect transistor, which uses a gate voltage to control the current flow. The MOSFET has three electrical terminals, the source, drain and gate. The source connects to the positive voltage terminal, the drain to the negative voltage terminal and the gate is used to control the current flow.When the gate is at a certain voltage, the MOSFET is turned off and the current flowing between the source and the drain is cut off. When the gate voltage is increased, the current flow between the source and the drain is increased. This is known as the threshold or switching voltage. In the case of the IRFR4510TRPBF, this threshold voltage is 5V.
The IRFR4510TRPBF also provides excellent thermal characteristics and is suitable for power management in a variety of applications. It is used in applications where efficient power conversion, significant power reduction, and wide voltage range are desired. A few examples include automotive electrical systems, HVAC systems, and cooling systems where efficient operation over a wide voltage range is needed. It is also used in high power switching applications such as DC-DC converters, lighting systems, and power supplies.
In addition to its wide range of applications, the IRFR4510TRPBF is also highly reliable and stable. It is designed with a shielded package to protect against external noise that can affect the switching performance. It is also designed to provide maximum surge reliability and stability, ensuring reliable operation in a wide range of conditions.
In conclusion, the IRFR4510TRPBF is an N-channel MOSFET transistor that is typically used in the field of power management. It is a single-form source-gate N-channel MOSFET and its key electrical characteristics include relatively low gate charge Qg, fast switching speed, low Rds(on) and decent current handling capability. It is suitable for power management in a variety of applications where efficient power conversion and significant power reduction are desired. It is also highly reliable and stable, with a shielded package for protection against external noise.
The specific data is subject to PDF, and the above content is for reference
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