Allicdata Part #: | IRFR4615TRLPBFTR-ND |
Manufacturer Part#: |
IRFR4615TRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 33A DPAK |
More Detail: | N-Channel 150V 33A (Tc) 144W (Tc) Surface Mount D-... |
DataSheet: | IRFR4615TRLPBF Datasheet/PDF |
Quantity: | 30000 |
Specifications
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 144W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1750pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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Introduction The IRFR4615TRLPBF is a field-effect transistor designed to provide low on-resistance, low gate charge, good avalanche characteristics and fast switching time. It is widely used in industrial, commercial and consumer electronic applications. Application The IRF4615TRLPBF is a very versatile and widely used transistor in industrial, commercial and consumer electronics applications. It is often used as a load switch in power management circuits, such as those found in laptops and mobile phones, as a voltage level shifter and as a circuit protection switch. The transistor is also used in audio amplifiers, motor control circuits and automotive applications.Features & Specifications The IRF4615TRLPBF is a N-type, metal-oxide-semiconductor field-effect transistor (MOSFET) designed for low-frequency applications. It features low on-resistance, low gate charge, good avalanche characteristics, fast switching time and low gate charge. It is available in a variety of packages and has a maximum drain current of 75mA, drain-source voltage of 30V, and maximum power dissipation of 297mW.Working Principle The IRF4615TRLPBF is an N-channel MOSFET, which means that it is a three-terminal device with an internal gate, drain and source. The gate is where the control voltage is applied and the drain and source are the two output terminals. When a voltage is applied to the gate, the MOSFET switches on, allowing current to flow from the drain to the source. When the voltage is removed, the MOSFET switches off, blocking current flow. The gate voltage determines the amount of current that can flow through the MOSFET and, as such, it is used to control the current in a circuit.Advantages The IRF4615TRLPBF offers a number of advantages over traditional transistors, such as a faster switching time and a lower gate charge. This makes it ideal for motor control applications, where quick switching times are required and high gate charge would cause significant losses. Additionally, the device has a low on-resistance, meaning that it is able to handle large currents with minimal losses. Finally, the device is available in a variety of packages, which makes it suitable for many different applications. Disadvantages The main disadvantage of the IRF4615TRLPBF is its maximum drain current of 75mA, which limits its use to low-current applications. Additionally, the device has a relatively high power dissipation of 297mW, which places it at a disadvantage compared to other MOSFETs with lower power dissipation. The device also has a maximum drain-source voltage of 30V, which limits its use for high-voltage applications.Conclusion The IRFR4615TRLPBF is a versatile and widely used field-effect transistor designed for low-frequency applications. It features low on-resistance, low gate charge and good avalanche characteristics. The device is available in a variety of packages and is suitable for low-current applications such as power management circuits and audio amplifiers. It is not suitable for high-current or high-voltage applications due to its current carrying and voltage capabilities.
The specific data is subject to PDF, and the above content is for reference
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