Allicdata Part #: | IRFR9010PBF-ND |
Manufacturer Part#: |
IRFR9010PBF |
Price: | $ 0.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 50V 5.3A DPAK |
More Detail: | P-Channel 50V 5.3A (Tc) 25W (Tc) Surface Mount D-P... |
DataSheet: | IRFR9010PBF Datasheet/PDF |
Quantity: | 463 |
1 +: | $ 0.64260 |
10 +: | $ 0.56637 |
100 +: | $ 0.44768 |
500 +: | $ 0.34717 |
1000 +: | $ 0.27408 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 240pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.1nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 2.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Tc) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFR9010PBF is a N-channel Enhancement Mode Field Effect Transistor (FET) which is widely used in high-end electronic applications. It is also referred to as a MOSFET - a metal-oxide-semiconductor field-effect transistor. It is a voltage-controlled semiconductor device that is used to switch large currents between two points. It is an ideal choice for applications that require high power, low noise, and low EMI.
The IRFR9010PBF has a wide range of applications due to its excellent performance characteristics. It is commonly used for power switching, power regulation, audio amplifying and signal switching. It is also an ideal choice for high-amplitude low-frequency power sources such as battery operated devices and power supplies.
The IRFR9010PBF has a breakdown voltage of 50 volts and a drain-source saturation voltage of 55 volts. It has a maximum current source of 1.5 amps and a maximum drain-source on-state resistance of 0.4 ohms. It is capable of operating at frequencies up to 600kHz and is capable of exhibiting near zero subthreshold leakage current.
The IRFR9010PBF works on the principle of voltage. The voltage between two sources, called the gate and the source, controls the ultimately current and resistance between the drain and the source. If a positive voltage is applied to the gate-source, current flows between the drain and the source, and the resistance between them decreases. Conversely, if a negative voltage is applied to the gate-source, current stops flowing and the resistance, or the on-resistance, increases.
In addition to its excellent performance characteristics, the IRFR9010PBF has a wide range of other useful features. It is designed with small dimensions, making it perfect for tight spaces. It is also designed to be compatible with most operating systems and to be able to withstand temperature extremes.
Overall, the IRFR9010PBF is an excellent choice for high-end power and signal switching applications. It is designed to offer excellent performance and optimal efficiency, even in the toughest environments. It is also able to withstand extreme temperatures and its small dimensions make it perfect for tight spaces.
The specific data is subject to PDF, and the above content is for reference
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