IRFR9010TRL

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IRFR9010TRL is a single N-channel enhancement-mode SHORT-channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) that is designed to minimize the on-state resistance (RDS(on)) yet maintaining superior switching performance. It utilizes the latest high-voltage MOSFETs process from International Rectifier and incorporates advanced features to simplify the application circuit. This device is designed to minimize total Switching and Conduction losses for powering any application from low-end DC-DC converters and lighting control to consumer applications such as cell phones and personal electronics.

IRFR9010TRL has wide range of applications due to its excellent switching performance and low on-state resistance. It can be used in DC-DC converters, DC-AC Inverters, Lighting Control, Automotive Power Train, Battery Chargers, UPS Systems and many other applications. It is also suitable for high frequency switching applications due to its low gate charge (QG). It is designed for high performance, low-voltage power and automotive applications.

The working principle of the IRFR9010TRL is based on the partially depleted SOI (PD-SOI) technology. It consists of a highly doped N-type drain region that is partially connected to the source and gate by a thin gate dielectric. By applying appropriate gate voltage, the drain can be completely separated from the source and gate, thereby compressing the drain current and providing logic level control. When a voltage is applied to the drain, the channel resistance amplifies the current and passes through the drain.

The IRFR9010TRL has a wide variety of features that makes it suitable for various applications. It has an low RDS(on) of 3 mΩ for operation up to 30V VDS at the ambient temperature of 25°C. The maximum drain source voltage (VDSS) is 30V and the drain current (IDS) is, maximum 4A. This device is designed to operate at very high switching frequency with low gate charge, hence it is suitable for high frequency switching applications. The operating temperature range for this device is -55°C to +175°C.

The IRFR9010TRL is a very reliable device with excellent package options. It is available in TO-220AB and CMPAK-4 packages, with maximum power dissipation (PD) of 2.9W and 6W respectively. The TO-220AB package is compact, heatsinkable, and cost effective with thermal improved power packages, while the CMPAK-4 package provides enhanced thermal capability and superior electrical performance. Both packages provide excellent ESD protection.

In summary, the IRFR9010TRL is a high performance, low-voltage, single N-channel enhancement-mode MOSFET. It is designed to provide superior switching performance with low on-state resistance and low gate charge. It is suitable for high frequency switching applications and is available in two packages with excellent ESD protection. The IRFR9010TRL is widely used in DC-DC converters, DC-AC Inverters, Lighting Control, Automotive Power Train, Battery Chargers and UPS Systems.

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