Allicdata Part #: | IRFR9024PBF-ND |
Manufacturer Part#: |
IRFR9024PBF |
Price: | $ 1.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 8.8A DPAK |
More Detail: | P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Surfac... |
DataSheet: | IRFR9024PBF Datasheet/PDF |
Quantity: | 969 |
1 +: | $ 1.40490 |
10 +: | $ 1.27008 |
100 +: | $ 1.02047 |
500 +: | $ 0.79369 |
1000 +: | $ 0.65763 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 5.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFR9024PBF is a high voltage power MOSFET transistor of the N-Channel Enhancement Mode type. This MOSFET is designed to withstand high voltages, making them ideal for a variety of applications where high voltage protection is needed. This article will provide information regarding the application field and the working principle of the IRFR9024PBF.
The IRFR9024PBF is a MOSFET transistor which is used in a variety of switch mode power supplies, high voltage power amplifiers, and as a driver for motors. It has a drain-source breakdown voltage of 400V, a maximum gate-source voltage of 30V, and a continuous drain current of -2A. This makes it ideal for these types of applications, where high voltage protection is necessary.
The IRFR9024PBF transistor is composed of three pins, namely Source, Drain, and Gate. The source pin is the negative terminal and is connected to the voltage source. The drain pin, on the other hand, is the positive terminal and is connected to the load to be switched. The gate pin is used to control the flow of current between the source and drain pins. When a voltage is applied to the gate pin, the transistor is able to conduct current and a voltage drop is created between the source and drain pins. This is called a VGS (Voltage Gain Scaling). The greater the Voltage applied to the gate, the greater the current flow between the source and drain pins.
At low voltage gate controls, the IRFR9024PBF conducts current from the source to the drain and acts as a high-frequency switch, allowing for a continuous flow of current. At higher voltage gate control, however, the current flow is limited and the transistor acts more as an amplifier, increasing the gain of the signal. This allows for higher power output from the circuit.
The IRFR9024PBF has many advantages over other types of transistors due to the unique properties of MOSFETs. It is able to achieve high gains with little voltage drop and can operate at high frequencies. It also has high reliability, high efficiency, and is suitable for high voltage supplies. Additionally, this transistor can be easily calibrated to work with different voltage levels.
Due to its multiple advantages, the IRFR9024PBF is widely used in a variety of applications. It is often used as a switch in power supplies, such as DC-DC converters, and is also found in switching power amplifiers. It can also be used as a motor driver, or in amplifier circuits. It is also used in various other applications such as switching applications, rectification of AC signals, and high voltage protection.
In conclusion, the IRFR9024PBF is a high voltage power MOSFET transistor which can be used in a variety of applications. Its unique properties makes it suitable for a range of applications where high voltage protection is needed. It offers high reliability, efficiency, and can be easily calibrated to work with different voltage levels. Its use in power supplies, switching power amplifiers, motor drivers, and other switching applications make it a highly versatile transistor.
The specific data is subject to PDF, and the above content is for reference
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