Allicdata Part #: | IRFR9024TRRPBF-ND |
Manufacturer Part#: |
IRFR9024TRRPBF |
Price: | $ 0.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 8.8A DPAK |
More Detail: | P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Surfac... |
DataSheet: | IRFR9024TRRPBF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.61228 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 5.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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<p>IRFR9024TRRPBF transistors are advanced silicon-gate, high-voltage and low on-resistance features FETs (field effect transistors). This MOSFET (metal oxide semiconductor field effect transistors) also has a high power-handling capability, making it suitable for a wide range of applications. In this article, we’ll discuss the application fields and working principles of IRFR9024TRRPBF transistors.</p><p><strong>Application Fields</strong></p><p>The IRFR9024TRRPBF is a FET specially designed for use in high voltage applications, such as high-speed motor drives and charge pump circuits. It has a low on-resistance and a fast switching time, making it suitable for many applications, including but not limited to:</p><ul> <li>Car audio systems</li> <li>Switching regulators</li> <li>High-power amplifiers</li> <li>High voltage converters</li> <li>Automotive control systems</li> <li>Power supplies</li></ul><p>It is also suitable for many power management and regulation applications, such as high-brightness LED dimmers, DC-DC converters, and motor control.</p><p><strong>Working Principle</strong></p><p>Like all FETs, the IRFR9024TRRPBF is a three-terminal device, powered by a DC voltage source. It consists of a source, drain, and gate terminal, with the gate voltage used to control the device’s current flow between the source and drain terminals.</p><p>When the gate voltage is applied, it creates an electric field which pushes electrons from source to the drain. This creates a conducting channel between the source and drain terminals, allowing current to flow from source to drain. The amount of current that can flow through the channel is controlled by the gate voltage.</p><p>This is the basic working principle of FETs, including the IRFR9024TRRPBF. The IRFR9024TRRPBF has an integrated metal oxide semiconductor (MOS) gate structure that makes it extremely suitable for high-speed switching applications.</p><p>Compared to standard field effect transistors, which generally have high on-resistance and limited switching speed, MOSFETs such as the IRFR9024TRRPBF can offer much better performance. Its low on-resistance and fast switching speed make it ideal for use in high voltage applications, such as high-power motor drives and charge pump circuits.</p><p>These are the application fields and working principles of the IRFR9024TRRPBF transistor. It is a high-performance, low on-resistance device that is well suited for use in high-voltage applications. It offers fast switching speed and high power handling capability, making it suitable for a wide range of applications.</p>The specific data is subject to PDF, and the above content is for reference
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