IRFR9120NTRPBF

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IRFR9120NTRPBF is a product of International Rectifier which has earned the distinction of being one of the most renowned semiconductors and active electronic components manufacturers in the world today. This product, which is a P-channel enhancement-mode MOSFET, is developed for various applications in both typical and high temperature environments.

Application Field

The P-channel Enhancement-mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET) IRFR9120NTRPBF is mainly aimed at powering high-speed switching and high frequency applications.

It is equipped with four functional channels and can efficiently power switched-mode power supplies, phase control circuits, or high-frequency switch-mode converters. It has been proven to be the preferred choice for power drive applications due to its integration of the industry’s newest features such as wide frequency range, fast switching, low on-resistance, low gate threshold, and easy to use EMI shield.

The device also works well in automotive computers, battery management systems, power powered tools, and uninterruptible power supplies.

Working Principle

The IRFR9120NTRPBF is able to work in high temperatures due to its advanced design characteristics. It is designed to have a power handling capacity of up to 900 watts, a blocking voltage of 45V, and a forward on-state resistance of 0.068 ohms. The drain-source voltage of the device ranges from -30V to 80V.

The basic working principle of this device is very simple. It functions by controlling the amount of current flowing from the source to the drain. The gate voltage is used to achieve this. The voltage variation measured at the gate changes the current flow from the source to the drain of the device.

When the gate voltage is increased, there is an increase in the conduction resistance. This effect is known as the body effect in MOSFETs and will result in higher current flow when the gate voltage is increased. This is referred to as the enhancement mode of operation.

The IRFR9120NTRPBF is capable of operating at high frequencies, enabling it to switch loads faster. It also has a higher repetition rate, which results in improved efficiency and reduced losses. The device also features low output capacitance as well as an integrated EMI shield.

In conclusion, the IRFR9120NTRPBF is an ideal choice for powering high-speed switching and high-frequency applications. With its advanced design features, it is able to work in extremely high temperature environments. It is capable of providing higher current flow, faster switching speeds, and improved efficiency compared to other devices in its class.

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