Allicdata Part #: | IRL540A-ND |
Manufacturer Part#: |
IRL540A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 28A TO-220 |
More Detail: | N-Channel 100V 28A (Tc) 121W (Tc) Through Hole TO-... |
DataSheet: | IRL540A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 121W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1580pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 58 mOhm @ 14A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL540A is a MOSFET that is specifically designed to switch high currents and provide significant power savings. It is a single FET, meaning it is a single transistor with one source, drain, and gate terminal. Its application fields range from home appliances to automotive, industrial, and consumer electronics. With high current handling capacity, low channel resistance, and low power consumption, it has become an ideal choice for projects requiring switching power.
The IRL540A is constructed of a three-layer silicon insulated-gate FET, giving it a high switching frequency and a low gate-drain capacitance. The features of the IRL540A make it ideal for dc-to-dc circuit switching and motor control. It can handle peak currents up to 77A and has a breakdown voltage of 100V. A low threshold voltage helps further reduce switching losses and improves efficiency of the device. The maximum power dissipation is 537W, and the maximum junction temperature is 175°C.
At the heart of the IRL540A is its working principle. Its operation is based on the N-channel MOSFET architecture. It has three components, the source, gate, and drain. The source is the device’s input, the gate is its controlling terminal, and the drain is its output. When the gate is activated, it creates a conductive channel between the source and drain, allowing current to flow. By adjusting the voltage on the gate, the current through the channel can be accurately controlled.
The power dissipation and heat dissipation of the IRL540A is done by the internal structure of the MOSFET. When a voltage is applied to the gate and a current is passed through the channel, some of that energy is lost in the form of heat. The higher the voltage and current, the greater the energy loss and heat generated. To reduce the heat, the gate is designed with a metal oxide layer that resists the heat and dissipates it back into the environment. This metal oxide layer also helps protect the FET from electro-static and extreme temperature damages.
The IRL540A MOSFET is an efficient and high-performing switch, with a low gate threshold voltage, high current handling capacity, and low power consumption. It is ideal for applications ranging from home appliances to automotive and industrial electronics. Its internal structure and working principle makes it a reliable, efficient, and powerful choice for projects requiring high power switching and motor control.
The specific data is subject to PDF, and the above content is for reference
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IRL530 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 15A TO-2... |
IRL540 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 28A TO-2... |
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IRL510 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.6A TO-... |
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IRL520NS | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 10A D2PA... |
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IRL530NL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 17A TO-2... |
IRL530NSTRL | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 17A D2PA... |
IRL530NSTRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 17A D2PA... |
IRL530STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 15A D2PA... |
IRL540S | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 28A D2PA... |
IRL510S | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.6A D2P... |
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IRL540NSTRRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 36A D2PA... |
IRL510A | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 5.6A TO-... |
IRL510L | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.6A TO-... |
IRL510STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.6A D2P... |
IRL510STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.6A D2P... |
IRL520L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 9.2A TO-... |
IRL520NSTRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 10A D2PA... |
IRL520S | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 9.2A D2P... |
IRL520STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 9.2A D2P... |
IRL520STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 9.2A D2P... |
IRL530L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 15A TO-2... |
IRL530S | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 15A D2PA... |
IRL530STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 15A D2PA... |
IRL540L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 28A TO-2... |
IRL540NSTRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 36A D2PA... |
IRL540STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 28A D2PA... |
IRL540STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 28A D2PA... |
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