IRL540A Allicdata Electronics
Allicdata Part #:

IRL540A-ND

Manufacturer Part#:

IRL540A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 28A TO-220
More Detail: N-Channel 100V 28A (Tc) 121W (Tc) Through Hole TO-...
DataSheet: IRL540A datasheetIRL540A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 121W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 58 mOhm @ 14A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRL540A is a MOSFET that is specifically designed to switch high currents and provide significant power savings. It is a single FET, meaning it is a single transistor with one source, drain, and gate terminal. Its application fields range from home appliances to automotive, industrial, and consumer electronics. With high current handling capacity, low channel resistance, and low power consumption, it has become an ideal choice for projects requiring switching power.

The IRL540A is constructed of a three-layer silicon insulated-gate FET, giving it a high switching frequency and a low gate-drain capacitance. The features of the IRL540A make it ideal for dc-to-dc circuit switching and motor control. It can handle peak currents up to 77A and has a breakdown voltage of 100V. A low threshold voltage helps further reduce switching losses and improves efficiency of the device. The maximum power dissipation is 537W, and the maximum junction temperature is 175°C.

At the heart of the IRL540A is its working principle. Its operation is based on the N-channel MOSFET architecture. It has three components, the source, gate, and drain. The source is the device’s input, the gate is its controlling terminal, and the drain is its output. When the gate is activated, it creates a conductive channel between the source and drain, allowing current to flow. By adjusting the voltage on the gate, the current through the channel can be accurately controlled.

The power dissipation and heat dissipation of the IRL540A is done by the internal structure of the MOSFET. When a voltage is applied to the gate and a current is passed through the channel, some of that energy is lost in the form of heat. The higher the voltage and current, the greater the energy loss and heat generated. To reduce the heat, the gate is designed with a metal oxide layer that resists the heat and dissipates it back into the environment. This metal oxide layer also helps protect the FET from electro-static and extreme temperature damages.

The IRL540A MOSFET is an efficient and high-performing switch, with a low gate threshold voltage, high current handling capacity, and low power consumption. It is ideal for applications ranging from home appliances to automotive and industrial electronics. Its internal structure and working principle makes it a reliable, efficient, and powerful choice for projects requiring high power switching and motor control.

The specific data is subject to PDF, and the above content is for reference

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