Allicdata Part #: | IRL520NSTRL-ND |
Manufacturer Part#: |
IRL520NSTRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 10A D2PAK |
More Detail: | N-Channel 100V 10A (Tc) 3.8W (Ta), 48W (Tc) Surfac... |
DataSheet: | IRL520NSTRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRL520NSTRL is a type of Field-Effect Transistor (FET) that is specifically designed as an ultra-high-efficiency low-voltage device. It is often used in MOSFET-based applications, and is suitable for a wide range of applications, including dc-dc converters, switching power supplies, motor control, and high-speed logic control. In comparison to other types of FETs, it is more energy efficient and robust, making it ideal for power-saving and reliable operations. As with most FETs, the IRL520NSTRL FET has a single source electrode, a drain electrode, and a gate electrode. This type of FET can be used with either an NMOS or PMOS type of circuit, depending on the specific application needs. In addition, it offers a low on-resistance, which results in a high switching speed and improved efficiency.
The core principle of FET operation is based on the idea of an electrostatic field. When the gate voltage is applied to the gate electrode, an electric field is created between the source and the drain electrodes. This field alters the electrical characteristics of the channel region in between the two electrodes, allowing current to flow between them. The current flow between the two electrodes increases as the electric field increases, and it depends on the voltage applied to the gate. By controlling the gate voltage, the current flow can be precisely controlled, allowing FETs to be used as switching devices.
The IRL520NSTRL FET is ideal for various applications due to its low on-resistance and high efficiency. It is typically used in high-speed switching applications, and is often employed in dc-dc converters, motor control systems, and power supplies. Furthermore, the FET’s fast switching speeds and reliable operation make it an excellent choice for logic control applications. As a result, the IRL520NSTRL FET is used in a wide range of applications, and is considered to be one of the most reliable and efficient FETs on the market.
In conclusion, the IRL520NSTRL FET is an ideal choice for a variety of applications due to its low on-resistance, high-speed switching, and reliable operation. It is often used in dc-dc converters, motor control systems, and logic control applications, as well as other high-speed switching applications. The IRL520NSTRL FET is also energy efficient, robust, and capable of precise current control, making it a preferred choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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