Allicdata Part #: | IRL510S-ND |
Manufacturer Part#: |
IRL510S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 5.6A D2PAK |
More Detail: | N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surfa... |
DataSheet: | IRL510S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 43W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 6.1nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 3.4A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL510S is a specific type of field-effect transistor (FET) known as an enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET). The IRL510S is suitable for a broad range of applications, including switching and amplification. Though it has a wide range of potential uses, it is best suited for applications requiring high power or very fast switching.
The IRL510S is a single, complementary MOSFET suitable for a variety of power and low-voltage applications. It has high efficiency, low steady-state gate charge, spiked transient drain current, and low off-state leakage. This makes it well suited for a wide range of applications, from motor control to pulse-width modulation (PWM) switching.
The working principle of the IRL510S is fairly simple. In essence, it works like a standard transistor, with a gate, source, and drain. The gate controls current flow between the source and drain by allowing or restricting the flow of electrons. When a voltage is applied to the gate, it creates an electric field between the gate and the source and a majority-carrier (electrons) channel is established, allowing current to flow. When the voltage is removed, the channel disappears and current flow stops.
In addition to its standard applications, the IRL510S can be used for other things like driving switching regulators or synchronous step-down converters. It can also be used in low-loss applications such as RF and audio power amplifiers, and low to medium power applications such as bridge and half bridge converters and low-side or high-side switches.
The IRL510S is an ideal device for a wide range of applications that require high power or very fast switching. It is well suited for motor control, pulse width modulation switching, low-loss applications like RF and audio power amplifiers, and low to medium power applications like bridge and half bridge converters. With its high efficiency, low steady-state gate charge, spiked transient drain current, and low off-state leakage, the IRL510S is a great choice for applications that need to be robust and reliable.
The specific data is subject to PDF, and the above content is for reference
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