IXFP130N10T Allicdata Electronics
Allicdata Part #:

IXFP130N10T-ND

Manufacturer Part#:

IXFP130N10T

Price: $ 1.97
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 100V 130A TO-220
More Detail: N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO...
DataSheet: IXFP130N10T datasheetIXFP130N10T Datasheet/PDF
Quantity: 1000
50 +: $ 1.77509
Stock 1000Can Ship Immediately
$ 1.97
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
Vgs (Max): --
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFP130N10T Application Field and Working Principle

The IXFP130N10T is a low-voltage, N-channel MOSFET that provides superior performance and low On-resistance. It can be used in applications where the device is configured in an off-state. This type of MOSFET utilizes a structure which features low On-resistance and typical voltage ratings up to 600V.

Features

  • Low On-resitance: 0.160 µm / 850 mØ
  • Typical voltage ratings up to 600V
  • Maximum drain current of 130 A
  • Low gate-charge: max. 4nC
  • Tiny DPAK package

Applications

  • High current, low voltage switching applications
  • DC-to-DC converters
  • High frequency switching circuits
  • High speed power converters
  • Automotive circuits

Working Principle

The IXFP130N10T utilizes a vertical N-channel MOSFET which offers superior performance and low Ohmic losses. It can be used as a field-effect transistor in applications where the device is configured in an off-state. This MOSFET features a three-terminal structure: a source, a drain and a gate. The voltage applied to the gate is used to control the current flowing from the source to the drain. A negative voltage applied to the gate will cause the MOSFET to turn off. A positive voltage applied to the gate will cause the device to turn on and allows current to flow from source to drain.

The IXFP130N10T MOSFET can be used in high current, low voltage switching applications. It is suitable for DC-to-DC converters, high frequency switching circuits and high speed power converters. The device features a maximum drain current of 130 A and a low gate-charge of max. 4nC. It is available in a tiny DPAK package.

The specific data is subject to PDF, and the above content is for reference

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